Process for manufacturing a DMOS transistor
First Claim
1. A process for manufacturing a DMOS transistor (100) with a semiconductor body (5), which features a surface layer with a source region (10) and a drain region (80) of a second conductivity type, and a first veil region (20) of a first conductivity type enclosing the source region (10), and a second well region (19) of a second conductivity type enclosing the drain region, wherein a gate region (35) is formed on the surface of the surface layer of the semiconductor body (5), which gate region extends from the source region across the first well region (20),said method comprising:
- starting on the surface of the semiconductor body (5), forming a trench-shaped structure in the surface layer, such that the trench-shaped structure includes a floor region, a source-end side wall extending from the floor region to the surface on a first side of the trench-Shaped structure proximate to the source region, and a drain-end side wall on a second side of the trench-shaped structure proximate to the drain region, wherein at least one of the side walls slopes non-perpendicularly relative to the surface so that the trench-shaped structure has a tapering cross-section with a greater width at the surface than at the floor region;
producing a doping of the second conductivity type with a first concentration value in the floor region of the trench-shaped structure;
producing a doping of the second conductivity type with a second concentration value in the source-end side wall of the trench-shaped structure; and
producing a doping of the second conductivity type with a third concentration value in the drain-end side wall of the trench-shaped structure.
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Accused Products
Abstract
In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.
40 Citations
49 Claims
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1. A process for manufacturing a DMOS transistor (100) with a semiconductor body (5), which features a surface layer with a source region (10) and a drain region (80) of a second conductivity type, and a first veil region (20) of a first conductivity type enclosing the source region (10), and a second well region (19) of a second conductivity type enclosing the drain region, wherein a gate region (35) is formed on the surface of the surface layer of the semiconductor body (5), which gate region extends from the source region across the first well region (20),
said method comprising: -
starting on the surface of the semiconductor body (5), forming a trench-shaped structure in the surface layer, such that the trench-shaped structure includes a floor region, a source-end side wall extending from the floor region to the surface on a first side of the trench-Shaped structure proximate to the source region, and a drain-end side wall on a second side of the trench-shaped structure proximate to the drain region, wherein at least one of the side walls slopes non-perpendicularly relative to the surface so that the trench-shaped structure has a tapering cross-section with a greater width at the surface than at the floor region;
producing a doping of the second conductivity type with a first concentration value in the floor region of the trench-shaped structure;
producing a doping of the second conductivity type with a second concentration value in the source-end side wall of the trench-shaped structure; and
producing a doping of the second conductivity type with a third concentration value in the drain-end side wall of the trench-shaped structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A process of manufacturing a DMOS transistor, comprising the steps:
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a) providing a semiconductor body having a surface;
b) etching a trench into said semiconductor body from said surface, so that said trench is bounded by a floor and first and second side walls extending from said surface to said floor, wherein said first and second side walls are non-parallel relative to each other and said trench has a tapering cross-section with a greater width between said first and second side walls at said surface than at said floor;
c) implanting a dopant into said semiconductor body to result in a first dopant concentration of said dopant in a first wail region of said semiconductor body along a location of said first side wall, a second dopant concentration of said dopant in a second wall region of said semiconductor body along a location of said second side wall, and a third dopant concentration of said dopant in a floor region of said semiconductor body along a location of said floor;
d) forming in said semiconductor body a source region adjacent to said location of said first aids wall;
e) forming in maid semiconductor body a drain region adjacent to said location of said second side wall;
f) forming in said semiconductor body a first well region of a first conductivity type at a location underlying said source region;
g) forming in said semiconductor body a second well region of a second conductivity type at a location underlying said drain region; and
h) forming a gate structure on said surface of said semiconductor body and adjoining said source region. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A process of manufacturing a DMOS transistor, comprising the steps:
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a) providing a semiconductor body having a surface;
b) implanting a first dopant into said semiconductor body to form a first doped region that is doped with said first dopant;
c) after said step b), etching a trench from said surface into said first doped region in said semiconductor body, so that said trench is bounded by a floor along a floor region in said semiconductor body, a first side wall extending from said surface to said floor along a first wall region having a first dopant concentration of said first dopant within said first doped region, and a second side wall extending from said surface to said floor along a second wall region having a second dopant concentration of said first dopant within said first doped region;
d) after said step c), implanting a second dopant through said trench into said floor region so as to produce a third dopant concentration of said second dopant in said floor region;
e) forming in said semiconductor body a source region adjacent to a location of said first side wall;
f) forming in said semiconductor body a drain region adjacent to a location of said second side wall;
g) forming in said semiconductor body a first well region of a first conductivity type at a location underlying said source region;
h) forming in said semiconductor body a second well region of a second conductivity type at a location underlying said drain region; and
i) forming a gate structure on said surface of said semiconductor body and adjoining said source region. - View Dependent Claims (49)
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Specification