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Method for fabricating a nitrided silicon-oxide gate dielectric

  • US 6,780,720 B2
  • Filed: 07/01/2002
  • Issued: 08/24/2004
  • Est. Priority Date: 07/01/2002
  • Status: Expired due to Term
First Claim
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1. A method or fabricating a gate dielectric layer, comprising:

  • providing a substrate;

    forming a silicon dioxide layer on a top surface of said substrate;

    selecting a nitrogen flow rate in dependence upon a thickness of the silicon dioxide layer;

    exposing said silicon dioxide layer to a plasma nitridation to convert said silicon dioxide layer into a silicon oxynitride layer; and

    performing a spiked rapid thermal anneal of said silicon oxynitride layer, wherein said exposing is performed using a decoupled plasma process; and

    wherein said exposing is performed using a flowing mixture of nitrogen and an inert gas such that the nitrogen flows at the nitrogen flow rate.

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