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Etch back of interconnect dielectrics

  • US 6,780,756 B1
  • Filed: 02/28/2003
  • Issued: 08/24/2004
  • Est. Priority Date: 02/28/2003
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor wafer comprising:

  • forming a front-end structure over a semiconductor substrate;

    forming a first layer of a back-end structure over said front-end structure, said first layer of a back-end structure having interconnects and regions of low-k material; and

    etching a top surface of said first layer of a back-end structure, wherein a height of said regions of low-k material is less than a height of said interconnects.

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