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Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer

  • US 6,780,776 B1
  • Filed: 12/20/2001
  • Issued: 08/24/2004
  • Est. Priority Date: 12/20/2001
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising the steps of:

  • forming a gate electrode on a substrate;

    forming a polysilicon reoxidation layer over the substrate and the gate electrode;

    depositing a nitride layer over the polysilicon reoxidation layer;

    anisotropically etching the nitride layer and stopping on the polysilicon reoxidation layer to form nitride offset spacers on the gate electrode; and

    forming source/drain extensions in the substrate after the nitride layer has been etched, subsequently forming sidewall spacers on the offset spacers, and forming source/drains in the substrate.

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