Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
First Claim
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1. A method of forming a semiconductor device, comprising the steps of:
- forming a gate electrode on a substrate;
forming a polysilicon reoxidation layer over the substrate and the gate electrode;
depositing a nitride layer over the polysilicon reoxidation layer;
anisotropically etching the nitride layer and stopping on the polysilicon reoxidation layer to form nitride offset spacers on the gate electrode; and
forming source/drain extensions in the substrate after the nitride layer has been etched, subsequently forming sidewall spacers on the offset spacers, and forming source/drains in the substrate.
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Abstract
A method of forming a semiconductor device provides a gate electrode on a substrate and forms a polysilicon reoxidation layer over the substrate and the gate electrode. A nitride layer is deposited over the polysilicon reoxidation layer and anisotropically etched The etching stops on the polysilicon reoxidation layer, with nitride offset spacers being formed on the gate electrode. The use of the polysilicon reoxidation layer as an etch stop layer prevents the gouging of the silicon substrate underneath the nitride layer, while allowing the offset spacers to be formed.
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Citations
15 Claims
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1. A method of forming a semiconductor device, comprising the steps of:
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forming a gate electrode on a substrate;
forming a polysilicon reoxidation layer over the substrate and the gate electrode;
depositing a nitride layer over the polysilicon reoxidation layer;
anisotropically etching the nitride layer and stopping on the polysilicon reoxidation layer to form nitride offset spacers on the gate electrode; and
forming source/drain extensions in the substrate after the nitride layer has been etched, subsequently forming sidewall spacers on the offset spacers, and forming source/drains in the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a semiconductor device with halo implants, comprising the steps of:
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forming a gate electrode on a substrate;
forming an etch stop layer on the substrate;
forming a nitride layer on the etch stop layer;
etching the nitride layer to form offset spacers on the gate electrode, and stopping the etching on the etch stop layer;
forming halo implants in the substrate; and
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forming source/drain extensions and source/drain implants by implantation through the polysilicon reoxidation layer after the nitride layer has been etched. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification