Semiconductor device and converter device with an integrated capacitor
First Claim
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1. A semiconductor device, comprising:
- a semiconductor component having a plurality of terminal regions;
a housing element accommodating said semiconductor component;
at least one capacitive element disposed in an integrated manner in one of said housing element and in a region of said housing element, said capacitive element having a first electrode region, a second electrode region and a dielectric region substantially disposed in-between said first electrode region and said second electrode region, at least one of said first and second electrode regions of said capacitive element electrically contact-connected to one of said terminal regions of said semiconductor component to form an electrical-contact connection, said capacitive element suppressing high-frequency electrical interference signals between said terminal regions, said capacitive element also functioning as an insulator element having an insulation region being said dielectric region and an electrically conductive surface region being said first electrode region disposed on said insulation region, said semiconductor component and said insulator element disposed stacked directly one above another in a sandwich-shaped manner, said electrical contact-connection being directly between said at least one of said first and second electrode regions of said capacitive element and said one of said terminal regions of said semiconductor component.
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Abstract
In order to keep the mounting outlay for shielding measures as low as possible, a semiconductor device having a semiconductor component in a housing element is proposed. At least one capacitive element having a first electrode, a second electrode and a dielectric is provided in an integrated manner in the housing element or in the region thereof. The electrode regions of the capacitive element are electrically contact-connected to terminal regions of the semiconductor component, in such a way that high-frequency interference signals between terminal regions can be suppressed.
64 Citations
30 Claims
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1. A semiconductor device, comprising:
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a semiconductor component having a plurality of terminal regions;
a housing element accommodating said semiconductor component;
at least one capacitive element disposed in an integrated manner in one of said housing element and in a region of said housing element, said capacitive element having a first electrode region, a second electrode region and a dielectric region substantially disposed in-between said first electrode region and said second electrode region, at least one of said first and second electrode regions of said capacitive element electrically contact-connected to one of said terminal regions of said semiconductor component to form an electrical-contact connection, said capacitive element suppressing high-frequency electrical interference signals between said terminal regions, said capacitive element also functioning as an insulator element having an insulation region being said dielectric region and an electrically conductive surface region being said first electrode region disposed on said insulation region, said semiconductor component and said insulator element disposed stacked directly one above another in a sandwich-shaped manner, said electrical contact-connection being directly between said at least one of said first and second electrode regions of said capacitive element and said one of said terminal regions of said semiconductor component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A converter device for a power supply device for a switched-mode power supply, the converter device comprising:
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a semiconductor device, including;
a semiconductor component having a plurality of terminal regions;
a housing element accommodating said semiconductor component; and
at least one capacitive element disposed in an integrated manner in one of said housing element and in a region of said housing element, said capacitive element having a first electrode region, a second electrode region and a dielectric region substantially disposed in-between said first electrode region and said second electrode region, at least one of said first and second electrode regions of said capacitive element being electrically contact-connected to one of said terminal regions of said semiconductor component to form an electric-contact connection, said capacitive element suppressing high-frequency electrical interference signals between said terminal regions, said capacitive element also functioning as an insulator element having an insulation region being said dielectric region and an electrically conductive surface region being said first electrode region disposed on said insulation region, said semiconductor component and said first insulator element disposed stacked directly one above another in a sandwich-shaped manner, said electrical contact-connection being directly between said at least one of said first and second electrode regions of said capacitive element and said one of said terminal regions of said semiconductor component. - View Dependent Claims (30)
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Specification