Non-volatile memory erase circuitry

• US 6,781,880 B2
• Filed: 07/19/2002
• Issued: 08/24/2004
• Est. Priority Date: 07/19/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Roohparvar, Frankie Fariborz
• Primary Examiner(s): HO, HOAI V
• Application Number:
  US10/199,718
• Publication Number:
  US 20040012999A1
• Time in Patent Office: 767 Days
• Field of Search: 365/185.18, 365/185.19, 365/185.28, 365/185.29, 365/185.01
• US Class Current: 365/185.18
• CPC Class Codes: G11C 16/30 Power supply circuits

Abstract

A non-volatile memory device includes floating gate memory cells, a pulse counter and voltage pump control circuitry. The control circuitry selectively activates pumps in response to a count output of the counter. In one embodiment, the pump output current is increased as the counter output increases. The memory allows for erase operations that reduce leakage current during initiation of an erase operation.

Claims

1. A non-volatile memory device comprising:

an array of memory cells;

a counter circuit coupled to count voltage pulses applied to the memory cells;

a voltage pump circuit to generate an elevated voltage output from an input voltage; and

control circuitry to increase or decrease, during erase and program operations, a current sourced by the voltage pump circuit in response to an output of the counter circuit.

2. The non-volatile memory device of claim 1 wherein the voltage pump circuit comprises a plurality of parallel pumps.

3. The non-volatile memory device of claim 2 wherein the plurality of parallel pump stages are selectively activated in response to the output of the counter circuit.

4. The non-volatile memory device of claim 3 wherein a number of activated parallel pumps increases in response to a corresponding count increase of the output of the counter circuit.

5. A flash memory device comprising:

an array of floating gate memory cells;

a first voltage pump coupled to produce an output voltage from an input voltage, wherein the output voltage is produced by sequentially elevating the input voltage through first series coupled pump stages;

a second voltage pump coupled in parallel to the first voltage pump to produce the output voltage from the input voltage, wherein the output voltage is produced by sequentially elevating the input voltage through second series coupled pump stages;

a counter to maintain a running count of voltage pulses applied to the array during erase and program operations; and

control circuitry coupled to the first and second voltage pumps and the counter, wherein the control circuit selectively activates, during erase and program operations, the first and second voltage pumps in response to the running count of the counter.

6. The flash memory of claim 5 wherein the first and second voltage pumps are selectively activated to increase a cumulative output current of the first and second voltage pumps in response to an increasing running count of the counter circuit.

7. A flash memory device comprising:

an array of floating gate memory cells;

control circuitry to perform an erase operation on the floating gate memory cells, wherein the floating gate memory cells are erased by applying voltage pulses to the floating gate memory cells and a current limit of the voltage pulses is increased or decreased based upon a number of prior voltage pulses applied to the floating gate memory cells and a counter to generate the number of prior voltage pulses.

8. The flash memory device of claim 7 further comprising:

a first and second parallel voltage pumps each coupled to produce an output voltage from an input voltage, wherein the output voltage is produced by sequentially elevating the input voltage through series coupled pump stages;

a counter to maintain a running count of voltage pulses applied to the array during erase and program operations, wherein the control circuitry is coupled to the first and second parallel voltage pumps and the counter to selectively activate the first and second parallel voltage pumps in response to the running count of the counter.

9. A method of erasing a flash memory device comprising:

pre-programming a block of memory cells;

generating an erase voltage from a supply voltage using a voltage pump circuit having a plurality of parallel coupled pumps;

applying a plurality of erase pulses to the block of memory cells;

counting the erase voltage pulses applied to the memory; and

adjusting a current limit of the erase voltage by selectively activating the plurality of parallel coupled pumps in response to the counted erase voltage pulses.

10. The method of claim 9 wherein erase current limit is increased as the counted erase voltage pulses increases.

11. The method of claim 9 wherein adjusting the erase current limit comprises:

activating a first plurality of pumps of the voltage pump circuit while an output count of a counter circuit is equal to or less than X counts, such that the pump circuit provides an output voltage with a first current limit; and

activating the first plurality of pumps and a second plurality of pumps of the voltage pump circuit while an output count of the counter circuit is greater than X counts, such that the pump circuit provides the output voltage with a second current limit that is greater than the first current limit.

12. A non-volatile memory device comprising:

an array of memory cells;

a counter circuit coupled to count voltage pulses applied to the memory cells;

a voltage pump circuit having a plurality of voltage pumps to generate an elevated voltage output from an input voltage; and

control circuitry to selectively activate each of the plurality of voltage pumps, during erase and program operations, to adjust a current sourced by the voltage pump circuit in response to an output of the counter circuit.

13. A non-volatile memory device comprising:

an array of memory cells;

a counter circuit coupled to count voltage pulses applied to the memory cells;

a voltage pump circuit having a plurality of parallel voltage pumps to generate an elevated voltage output from an input voltage; and

control circuitry to selectively activate each of the plurality of voltage pumps, during erase and program operations, to adjust a current sourced by the voltage pump circuit in response to an output of the counter circuit, wherein a number of activated parallel pumps increases in response to a corresponding count increase of the output of the counter circuit.

14. The memory device of claim 13 wherein an erase current limit of the voltage pump circuit increases as the counted erase voltage pulses increase and decreases as the counted erase voltage pulses decrease.

15. The memory device of claim 13 wherein the non-volatile memory device is a floating gate flash memory cell.

16. The memory device of claim 13 wherein the input voltage is Vcc and the elevated voltage output is greater than V_cc.

17. The memory device of claim 13 and further including a processor coupled to the memory device that generates memory device commands.