Membrane pressure sensor containing silicon carbide and method of manufacture

• US 6,782,757 B2
• Filed: 10/16/2003
• Issued: 08/31/2004
• Est. Priority Date: 11/27/1998
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Clerc, Jean-Fréderic, Jaussaud, Claude, Joly, Jean-Pierre, Therme, Jean
• Primary Examiner(s): OEN, WILLIAM L
• Application Number:
  US10/685,526
• Publication Number:
  US 20040079163A1
• Time in Patent Office: 320 Days
• Field of Search: 737/15--27, 737/53--56, 29/253.5
• US Class Current: 73/754
• CPC Class Codes: G01L 19/003 using a detachable interface or adapter between the process medium and the pressure gauge
• CPC Class Codes: G01L 19/0061 Electrical connection means
• CPC Class Codes: G01L 19/141 Monolithic housings, e.g. molded or one-piece housings
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49169 Assembling electrical component directly to terminal or elongated conductor

Abstract

The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising:

a sensing element (4) integrating a membrane (8) in monocrystalline silicon carbide, made by micro-machining a substrate in polycrystalline silicon carbide, a first surface of membrane (8) intended to contact said medium, a second surface of membrane (8) comprising membrane deformation detection means (9) connected to electric contacts (10) to connect electric connection means (11), the surfaces of sensing element (4) contacting said medium being chemically inert to this medium;

a carrier (5) to support sensing element (4) so that said first surface of membrane (8) may be contacted with said medium and the second surface of membrane (8) may be shielded from said medium, carrier (5) being in polycrystalline silicon carbide;

a seal strip (6), in material containing silicon carbide, brazed between carrier (5) and sensing element (4) to protect the second surface of membrane (8) from any contact with said medium.

Claims

1. Manufacturing method by micro-machining at least one membrane sensing element for a pressure sensor able to operate at high temperature and to measure the pressure of a hostile medium, comprising the following steps:

(a) producing a layer of monocrystalline silicon carbide on one surface of a substrate containing polycrystalline silicon carbide,

(b) fabricating, on the free surface of the monocrystalline silicon carbide layer, detection means to detect membrane deformation,

(c) fabricating electric contracts on said free surface to connect the detection means to electric connection means,

(d) forming the membrane of said sensing element by removal of matter from the other surface of the substrate so as only to preserve polycrystalline silicon carbide.

2. Method according to claim 1, which the fabrication of said monocrystalline silicon carbide layer comprises:

transferring a first layer of monocrystalline silicon carbide to said surface of the substrate,

depositing by epitaxy a second layer of monocrystalline silicon carbide on the first layer in order to obtain said monocrystalline silicon carbide layer of controlled thickness.

3. Method according to claim 1, in which the fabrication of said layer of monocrystalline silicon carbide comprises the use of a wafer in monocrystalline silicon carbide in which a layer has been defined by a layer of microcavities generated by ion implantation, said wafer being bonded to said surface of the substrate then cleaved at the layer of microcavities so as only to preserve said layer defined on the substrate.

4. Method according to claim 3, in which cleavage of the wafer is obtained by coalescence of the microcavities resulting from a heat treatment.

5. Method according to claim 3, in which the bonding of said wafer to the substrate is obtained by molecular bonding.

7. Method according to claim 1, in which during the membrane formation step, the removal of matter from the other surface of the substrate is conducted using an operation chosen from among mechanical polishing and chemical etching.

8. Method according to claim 1, in which before step a) the method comprises the following preliminary steps:

machining a substrate to obtain a bump of complementary shape to the shape of the desired sensing element as seen from the hostile medium side,

depositing a layer of polycrytalline silicon carbide on the substrate on the bumping side,

levelling the layer previously deposited until the tip of the bump is reached, steps a) and d) then being conducted in the following manner;

a) the layer of monocrystalline silicon carbide is formed on the substrate on the side of the levelled layer,

d) the membrane of said sensing element is formed by removing the initial substrate.

9. Method according to claim 8, in which said substrate is in silicon.

10. Method according to claim 8, in which the fabrication of said monocrystalline silicon carbide layer comprises:

transferring a first layer of monocrystalline silicon carbide to the substrate,

depositing by epitaxy a second layer of monocrystalline silicone carbide on the first layer of monocrystalline silicon carbide in order to obtain said monocrystalline silicon carbide layer of controlled thickness.

11. Method according to claim 8, in which the levelling step is performed by mechanical-chemical polishing.

12. Method according to claim 8, in which the fabrication of said layer of monocrystalline silicon carbide comprises the use of a wafer in monocrystalline silicon carbide in which a layer has been defined by a layer of microcavities generated by ion implantation, said wafer being bonded to the substrate on the side of the levelled layer then cleaved at the layer of microcavities so as only to preserve said defined layer on the substrate.

13. Method according to claim 12, in which cleavage of the wafer is obtained by coalescence of the microcavities resulting from a heat treatment.

14. Method according to claim 12, in which the bonding of said wafer to the substrate is obtained by molecular bonding.

15. Method according to claim 8, further comprising depositing an insulating interface layer on the surface of the substrate containing polycrystalline silicon carbide prior to producing said layer of monopolycrystalline silicon carbide thereon.

16. Method according to claim 8, in which removal of the initial substrate is obtained by the chemical etching.

17. Method according to claim 1, in which before step a) the method comprises the following preliminary steps:

machining a substrate to obtain a bump of complementary shape to the shape of the desired sensing element as seen from the hostile medium side,

depositing a layer OF polycrystalline silicon carbide on the substrate on the bumping side,

levelling the layer previously deposited until the desired thickness of the membrane subsists above the bump, steps a) and d) then being conducted in the following manner;

a) the layer of monocrystalline silicon carbide is formed on the substrate on the side of the levelled layer,

d) the membrane of said sensing elements is formed by removing the initial substrate.

18. Method according to claim 17, in which said substrate is in silicon.

19. Method according to claim 17, in which the levelling step is performed by mechanical-chemical polishing.

20. Method according to claim 17, in which the fabrication of said layer of monocrystalline silicon carbide is obtained using a wafer of monocrystalline silicon carbide in which said layer has been defined by a layer of microcavities generated by ion implantation, said wafer being bonded to this substrate on the side of the levelled layer then cleaved at the layer of microcavities so as only to preserve the layer of monocrystalline silicon carbide on the substrate.

21. Method according to claim 20, in which cleavage of the wafer is obtained by coalescence of the microcavities resulting from a heat treatment.

22. Method according to claim 20, in which the bonding of said wafer to the substance is obtained by molecular bonding.

23. Method according to claim 17, in which removal of the initial substrate is obtained by chemical etching.

24. Method according to claim 17, in which an insulating interface layer is deposited on the levelled layer before the layer of monocrystalline silicon carbide.

25. Method according to claim 17 in which, during the formation of the detection means, the remaining part of the monocrystalline silicon carbide layer is removed.

26. Method according to claim 1, in which the method being a collective manufacturing method for producing sensing elements from one same substrate, a final substrate cutting step is provided to obtain separate sensing elements.

6. Method according to clam 1, further comprising depositing an insulating interface layer on the surface of the substrate containing polycrystalline silicon carbide prior to producing said layer of monocrystalline silicon carbide thereon.