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Method of reducing resistance for conductive film formed on base material

  • US 6,783,811 B2
  • Filed: 12/13/2001
  • Issued: 08/31/2004
  • Est. Priority Date: 06/28/2001
  • Status: Expired due to Fees
First Claim
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1. A method of reducing resistance for a conductive film made of metal oxide formed on a base material, comprising irradiating the film with UV light in a vacuum or in an atmosphere of reducing gas at a temperature maintained between 25°

  • C. and 300°

    C.

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