Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
First Claim
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1. A method for processing a substrate, comprising:
- reacting an organosilicon compound selected from the group consisting of dimethylsilanediol, diphenylsilanediol, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyidimethoxysilane, 1,3-dimethyidisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran to deposit a dielectric layer comprising silicon, oxygen, and carbon on the substrate; and
depositing a layer comprising silicon, carbon, and hydrogen on the dielectric layer.
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Abstract
A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
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Citations
20 Claims
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1. A method for processing a substrate, comprising:
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reacting an organosilicon compound selected from the group consisting of dimethylsilanediol, diphenylsilanediol, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyidimethoxysilane, 1,3-dimethyidisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran to deposit a dielectric layer comprising silicon, oxygen, and carbon on the substrate; and
depositing a layer comprising silicon, carbon, and hydrogen on the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for processing a substrate, comprising:
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reacting a gas mixture comprising an organosilicon compound selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, dimethylsilanediol, ethylsilane, phenylsilane, diphenylsilane, diphenylsilanediol, methylphenylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran, to deposit a dielectric layer comprising silicon, oxygen, and carbon on the substrate, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3; and
depositing an oxygen doped silicon carbide layer on the dielectric layer by reacting an alkylsilane and oxygen in a plasma of an inert gas. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method for processing a substrate, comprising:
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reacting an organosilicon compound selected from the group consisting of dimethylsilanediol, diphenylsilanediol, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran to deposit a dielectric layer comprising silicon, oxygen, and carbon on the substrate; and
depositing an oxygen doped silicon carbide layer on the dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification