Amorphous silicon photovoltaic devices
First Claim
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1. A photovoltaic device comprising, an amorphous silicon-containing i-layer having a thickness of about 3000 Å
- to about 5500 Å
, a p-layer having a thickness of no more than about 80 Å
, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°
C. to about 220°
C, and where the device is more efficient at 80°
C. than at 40°
C.
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Abstract
This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.
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Citations
14 Claims
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1. A photovoltaic device comprising, an amorphous silicon-containing i-layer having a thickness of about 3000 Å
- to about 5500 Å
, a p-layer having a thickness of no more than about 80 Å
, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°
C. to about 220°
C, and where the device is more efficient at 80°
C. than at 40°
C. - View Dependent Claims (2, 3, 4)
- to about 5500 Å
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5. A process for generating electric current comprising exposing a photovoltaic device comprising a p-layer and an amorphous silicon-containing i-layer to sunlight wherein the photovoltaic device is at a temperature of at least about 50°
- C., the amorphous silicon-containing i-layer has a thickness of about 3000 Å
to about 5500 Å
, the p-layer has a thickness of no more than about 80 Å
the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°
C. to about 220°
C., or and wherein than at 80°
C. than at 40°
C. - View Dependent Claims (6, 7, 8)
- C., the amorphous silicon-containing i-layer has a thickness of about 3000 Å
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9. A process for generating electric current comprising exposing a photovoltaic device comprising a p-layer and an amorphous silicon-containing i-layer to sunlight wherein the photovoltaic device is at a temperature of at least about 50°
- C. the amorphous silicon-containing i-layer has a thickness of about 3000 Å
to about 550 Å
, the p-layer has a thickness of no more than about 100 Å
, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°
C. to about 220°
C. the device is more efficient at 80°
C. at 40°
C., the photovoltaic device is in the form of a module and the module is positioned on a roof outer surface such that a bottom surface of the module is no more than about 3 inches from the roof outer surface and wherein air is located in a space between the module and the roof outer surface and horizontal movement of air in the space between the bottom surface and the roof motor surface is no more than about 1 ft/sec.
- C. the amorphous silicon-containing i-layer has a thickness of about 3000 Å
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10. A system comprising a building surface, a photovoltaic device in the form of a module, wherein the photovoltaic device comprises an amorphous silicon-containing i-layer having thickness of about 3000 Å
- to about 5500 Å
, a p-layer having a thickness of no more than about 100 Å
, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°
C. to about 220°
C., and, wherein a bottom surface of the module is spaced from the building outer surface by a distance of no more than about 1 inch, and wherein the device is more efficient at 80°
C. than at 40°
C. - View Dependent Claims (11, 12, 13, 14)
- to about 5500 Å
Specification