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Amorphous silicon photovoltaic devices

  • US 6,784,361 B2
  • Filed: 09/20/2001
  • Issued: 08/31/2004
  • Est. Priority Date: 09/20/2000
  • Status: Expired due to Fees
First Claim
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1. A photovoltaic device comprising, an amorphous silicon-containing i-layer having a thickness of about 3000 Å

  • to about 5500 Å

    , a p-layer having a thickness of no more than about 80 Å

    , the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180°

    C. to about 220°

    C, and where the device is more efficient at 80°

    C. than at 40°

    C.

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