Semiconductor device and manufacturing method thereof

• US 6,784,457 B2
• Filed: 12/12/2000
• Issued: 08/31/2004
• Est. Priority Date: 12/14/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Yamazaki, Shunpei
• Primary Examiner(s): ECKERT II, GEORGE C
• Application Number:
  US09/735,204
• Publication Number:
  US 20010025958A1
• Time in Patent Office: 1,358 Days
• Field of Search: 257/57, 257/59, 257/66, 257/72, 438/149, 438/151, 349/106, 349/139, 349/149
• US Class Current: 257/72
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

There is a problem in that, in a liquid crystal display panel in which a color filter is formed on an opposing substrate, it is necessary to assemble an element substrate and the opposing substrate by extremely high precision position alignment, and when this precision is low, the aperture ratio decreases and the display becomes darker. With the present invention, red color filters (R) are formed on driving circuits (402, 403), peripheral circuits, and a color filter (405d) for protecting a pixel TFT portion (407) is formed for each pixel.

Claims

1. A semiconductor device comprising:

a pixel TFT formed in a pixel portion on a substrate;

a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate;

a color filter formed over at least gate electrodes of the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit;

an interlayer insulating film formed over the color filter, the interlayer insulating film comprising organic insulating material; and

electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the color filter and the interlayer insulating film.

2. A device according to claim 1, further comprising a pixel electrode formed in the pixel portion, on the interlayer insulating film, the pixel electrode connected to one of the electrodes which is connected to the pixel TFT.

3. A device according to claim 2, wherein the pixel electrode formed in the pixel portion has light transmitting properties.

4. A device according to claim 1, wherein the p-channel TFT in the driving circuit is at least used as an analog switch.

5. A device according to claim 1, wherein the gate electrodes of the pixel TFT, the p-channel TFT, and the n-channel TFT comprise a heat resistant conducting material and are extended from the driving circuit, and

wherein a gate wiring connected to the gate electrodes comprises a low resistance conducting material.

6. A device according to claim 5, wherein the heat resistant conducting material is an element selected from the group consisting of tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), a chemical compound comprising at least one element thereof, a nitride comprising at least one element thereof, and a silicide comprising at least one element thereof.

7. A device according to claim 1, wherein an angle of a tapered portion of each of the gate electrodes is from 5 to 45°

.

8. A device according to claim 1, wherein the semiconductor device is a liquid crystal display device.

9. A device according to claim 1, wherein the semiconductor device is an EL display device.

10. A device according to claim 1, wherein the semiconductor device is an electronic device selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and an electronic amusement device.

11. A semiconductor device comprising:

a pixel TFT formed in a pixel portion on a substrate;

a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate;

a protecting insulating film formed over at least gate electrodes of the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit, the protecting insulating film comprising an inorganic insulating material;

a color filter formed over the pixel TFT, the p-channel TFT, and the n-channel TFT with the protective insulating film interposed therebetween;

an interlayer insulating film formed over the color filter, the interlayer insulating film comprising organic insulating material; and

electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the protecting insulating film, the color filter, and the interlayer insulating film.

12. A device according to claim 11, wherein the color filter formed over the p-channel TFT and the n-channel TFT of the driving circuit is a colored film which is colored red.

13. A device according to claim 11, wherein the color filter formed over the pixel TFT is a colored film which is colored red.

14. A device according to claim 11, further comprising a pixel electrode formed in the pixel portion and located on the interlayer insulating film, the pixel electrode connected to one of the electrodes which is connected to the pixel TFT.

15. A device according to claim 14, wherein the pixel electrode formed in the pixel portion has light transmitting properties.

16. A device according to claim 11, wherein the p-channel TFT of the driving circuit is at least used as an analog switch.

17. A device according to claim 11, wherein the gate electrodes of the pixel TFT, the p-channel TFT and the n-channel TFT of the driving circuit comprise a heat resistant conducting material and are extended from the driving circuit, and

wherein a gate wiring connected to the gate electrodes comprises a low resistance conducting material.

18. A device according to claim 17, wherein the heat resistant conducting material is an element selected from the group consisting of tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), a chemical compound comprising at least one element thereof, a nitride comprising at least one element thereof, and a suicide comprising at least one element thereof.

19. A device according to claim 11, wherein an angle of a tapered portion of each the gate electrodes is from 5 to 45°

.

20. A device according to claim 11, wherein the semiconductor device is a liquid crystal display device.

21. A device according to claim 11, wherein the semiconductor device is an EL display device.

22. A device according to claim 11, wherein the semiconductor device is an electronic device selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and an electronic amusement device.

23. A semiconductor device comprising:

a pixel TFT formed in a pixel portion on a substrate; and

a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate;

a protecting insulating film formed over at least gate electrodes of the pixel TFT, the p-channel TFT and the n-channel TFT in the driving circuit, the protecting insulating film comprising an inorganic insulating material;

a color filter formed over the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit with the protective insulating film interposed therebetween;

an interlayer insulating film formed over the color filter, the interlayer insulating film comprising organic insulating material;

electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the protecting film, the color filter, and the interlayer insulating film; and

a pixel electrode formed in the pixel portion and located on the interlayer insulating film, the pixel electrode connected to one of the electrodes which is connected to the pixel TFT.

24. A device according to claim 23, wherein the color filter formed over the p-channel TFT and the n-channel TFT of the driving circuit is a colored film which is colored red.

25. A device according to claim 23, wherein the color filter formed over the pixel TFT is a colored film which is colored red.

26. A device according to claim 23, wherein the pixel electrode formed in the pixel portion has light transmitting properties.

27. A device according to claim 23, wherein the p-channel TFT of the driving circuit is at least used as an analog switch.

28. A device according to claim 23, wherein the gate electrodes of the pixel TFT, the p-channel TFT, and the n-channel TFT comprise a heat resistant conducting material and are extended from the driving circuit, and

wherein a gate wiring connected to the gate electrodes comprises a low resistance conducting material.

29. A device according to claim 28, wherein the heat resistant conducting material is an element selected from the group consisting of tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), a chemical compound comprising at least one element thereof, a nitride comprising at least one element thereof, and a silicide comprising at least one element thereof.

30. A device according to claim 23, wherein an angle of a tapered portion of each the gate electrodes is from 5 to 45°

.

31. A device according to claim 23, wherein the semiconductor device is a liquid crystal display device.

32. A device according to claim 23, wherein the semiconductor device is an EL display device.

33. A device according to claim 23, wherein the semiconductor device is an electronic device selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and an electronic amusement device.

34. A semiconductor device comprising:

a pixel TFT formed in a pixel portion on a substrate; and

a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate,

a color filter formed over the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit;

an interlayer insulating film formed over the color filter, the interlayer insulating film comprising organic insulating material;

electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the color filter and the interlayer insulating film; and

a pixel electrode formed in the pixel portion and located on the interlayer insulating film, the pixel electrode electrically connected to the pixel TFT via one of the electrodes,

wherein the pixel TFT is connected to a light emitting element in the pixel portion.

35. A device according to claim 34, wherein in the pixel portion, red color filters are formed over the pixel TFTs and green and blue color filters are formed adjacent to the pixel electrodes.

36. A device according to claim 34, wherein the color filter formed over the p-channel TFT and the n-channel TFT of the driving circuit is a colored film which is colored red.

37. A device according to claim 34, wherein the color filter formed over the pixel TFT is a colored film which is colored red.

38. A device according to claim 34, wherein light emitted from the light emitting element is irradiated passing through the substrate.

39. A device according claim 34, wherein the semiconductor device is an EL display device.

40. A device according claim 34, wherein the semiconductor device is an electronic device selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and an electronic amusement device.

41. A semiconductor device comprising:

a pixel TFT formed in a pixel portion on a substrate; and

a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate,

a protecting insulating film formed over at least gate electrodes of the pixel TFT, the p-channel TFT and the n-channel TFT in the driving circuit, the protecting insulating film comprising an inorganic insulating material;

a color filter formed over the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit with the protective insulating film interposed therebetween;

electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the protecting film, the color filter, and the interlayer insulating film; and

a pixel electrode formed in the pixel portion and located over the color filter, the pixel electrode connected to one of the electrodes which is connected to the pixel TFT; and

a light emitting element formed in the pixel portion and electrically connected to the pixel TFT.

42. A device according to claim 41, wherein the color filter formed over the p-channel TFT and the n-channel TFT of the driving circuit is a colored film which is colored red.

43. A device according to claim 41, wherein the color filter formed over the pixel TFT is a colored film which is colored red.

44. A device according to claim 41, wherein light emitted from the light emitting element is irradiated passing through the substrate.

45. A device according to claim 41, wherein the semiconductor device is an EL display device.

46. A device according to claim 41, wherein the semiconductor device is an electronic device selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and an electronic amusement device.