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Semiconductor device and manufacturing method thereof

  • US 6,784,457 B2
  • Filed: 12/12/2000
  • Issued: 08/31/2004
  • Est. Priority Date: 12/14/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a pixel TFT formed in a pixel portion on a substrate;

    a p-channel TFT and an n-channel TFT formed in a driving circuit in a periphery of said pixel portion on said substrate;

    a color filter formed over at least gate electrodes of the pixel TFT in the pixel portion and the p-channel TFT and the n-channel TFT in the driving circuit;

    an interlayer insulating film formed over the color filter, the interlayer insulating film comprising organic insulating material; and

    electrodes formed on the interlayer insulating film and electrically connected to the pixel TFT, the p-channel TFT, and the n-channel TFT, respectively, via openings in the color filter and the interlayer insulating film.

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