III-Phospide and III-Arsenide flip chip light-emitting devices
First Claim
1. A light-emitting semiconductor device comprising:
- a stack of layers including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;
a superstrate disposed on a first side of said stack, said superstrate substantially transparent to light emitted by said active region;
a first electrical contact and a second electrical contact electrically coupled to apply a voltage across said active region, said first electrical contact and said second electrical contact disposed on a second side of said stack opposite to said first side.
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Accused Products
Abstract
A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
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Citations
56 Claims
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1. A light-emitting semiconductor device comprising:
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a stack of layers including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;
a superstrate disposed on a first side of said stack, said superstrate substantially transparent to light emitted by said active region;
a first electrical contact and a second electrical contact electrically coupled to apply a voltage across said active region, said first electrical contact and said second electrical contact disposed on a second side of said stack opposite to said first side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 37, 38, 42)
a patterned semiconductor layer disposed on portions of said second side of said stack;
a plurality of ohmic contacts disposed on said patterned semiconductor layer; and
a reflective metal layer disposed on portions of said second side of said stack not covered by said patterned semiconductor layer.
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21. The light-emitting device of claim 1, wherein said first electrical contact surrounds said second electrical contact.
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22. The light-emitting device of claim 1, further comprising at least one layer highly reflective to light emitted by said active region located to reflect said light toward said superstrate.
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23. The light-emitting device of claim 1, further comprising an interface textured to scatter light emitted by said active region.
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24. The light-emitting device of claim 1, further comprising a lens attached to said superstrate.
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25. The light-emitting device of claim 1, wherein an area of said active region is greater than about 0.2 square millimeters.
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26. The light-emitting device of claim 1, wherein an area of said active region is greater than about 1.0 square millimeters.
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27. The light-emitting device of claim 1, wherein said stack of layers, said superstrate, and said electrical contacts are configured to allow said light-emitting semiconductor device to operate at an input power exceeding 0.5 Watts.
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28. The light-emitting device of claim 1, further comprising a composition graded layer disposed between said superstrate and said stack, wherein the composition graded layer is substantially lattice matched to said superstrate in a portion of the composition graded layer closest to said superstrate and substantially lattice matched to said stack in a portion of composition graded layer closest to said stack.
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37. The light-emitting semiconductor device of claim 1, wherein said superstrate is at least 25 μ
- m thick.
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38. The light-emitting semiconductor device of claim 1, wherein the superstrate has a thickness between about 25 μ
- m and about 1000 μ
m.
- m and about 1000 μ
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42. The light-emitting device of claim 37, wherein said stack of layers, said superstrate, and said electrical contacts are configured to allow said light-emitting semiconductor device to operate at an input power exceeding 0.5 Watts.
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29. An array of light-emitting devices comprising:
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a substrate having a surface; and
a plurality of light-emitting semiconductor devices, each of which comprises a stack of semiconductor layers including an active region, a superstrate disposed on a first side of said stack and substantially transparent to light emitted by said active region, and a first electrical contact and a second electrical contact disposed on a second side of said stack opposite to said first side, said light-emitting semiconductor devices disposed above said surface of said substrate with their superstrates facing away from said substrate;
wherein said active regions of at least a subset of said light-emitting semiconductor devices include a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36)
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39. A light-emitting semiconductor device comprising:
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a stack of layers including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;
a superstrate disposed on a first side of said stack, wherein said superstrate provides mechanical stability to the device and is substantially transparent to light emitted by said active region; and
a first electrical contact and a second electrical contact electrically coupled to apply a voltage across said active region, said first electrical contact and said second electrical contact disposed on a second side of said stack opposite to said first side. - View Dependent Claims (40, 41)
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43. A light-emitting semiconductor device comprising:
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a stack of layers including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;
a superstrate disposed on a first side of said stack, wherein said superstrate has a thickness between about 2 mils and about 15 mils and is substantially transparent to light emitted by said active region; and
a first electrical contact and a second electrical contact electrically coupled to apply a voltage across said active region, said first electrical contact and said second electrical contact disposed on a second side of said stack opposite to said first side. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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Specification