Semiconductor device and manufacturing method thereof

• US 6,784,471 B2
• Filed: 05/22/2002
• Issued: 08/31/2004
• Est. Priority Date: 08/09/2001
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakabayashi, Masakazu
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): Louie, Wai-Sing
• Application Number:
  US10/151,854
• Publication Number:
  US 20030032249A1
• Time in Patent Office: 832 Days
• Field of Search: 257/215, 257/235, 257/249, 257/262, 257/288, 257/310, 257/336, 257/374, 257/382, 257/408, 257/412, 257/245
• US Class Current: 257/288
• CPC Class Codes: H01L 21/2255 the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
• CPC Class Codes: H01L 21/823487 with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface with a current flow parallel to the substrate surface H01L21/823431
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A semiconductor device capable of reducing manufacturing cost and on-state resistance is provided by selectively disposing a plurality of active regions (AR) on a main surface of a stainless steel substrate (1) and disposing a trench gate (7) so as to bury the area between the active regions (AR). The active regions (AR) have a multilayer structure that is made up of a drain layer (2) containing antimony (Sb) as an n-type impurity in a relatively high concentration (n⁺), a polysilicon layer (3) overlying the drain layer (2) and containing a p-type impurity, and a source layer (4) overlying the polysilicon layer (3) and containing an n-type impurity in a relatively high concentration (n⁺).

Claims

1. A semiconductor device comprising:

a metal substrate;

plural active regions selectively disposed on a main surface of said metal substrate; and

a conductor layer being disposed above said main surface of said metal substrate and making electrical connection with said plural active regions,

said plural active regions being electrically independent from one another in a direction horizontal to said main surface of said metal substrate and using said conductor layer and said metal substrate as a main electrode, so that a main current flows in a direction perpendicular to said main surface of said metal substrate in each of said plural active regions.

2. The semiconductor device according to claim 1, wherein said plural active regions are formed by plural polysilicon layers.

3. The semiconductor device according to claim 2, wherein said polysilicon layers are disposed at spaced intervals and in parallel with one another, said semiconductor device further comprising:

a first insulating film disposed on said metal substrate between said polysilicon layers;

a second insulating film covering at least side surfaces of said polysilicon layers; and

a trench gate buried in a trench region surrounded and defined by said first and second insulating films,

each of said polysilicon layers having;

a first semiconductor layer of a first conductivity type; and

a second semiconductor layer of the first conductivity type;

said first semiconductor layer being disposed in the surface of each of said polysilicon layers so as to make contact with said metal substrate,

said second semiconductor layer being disposed in the surface of each of said polysilicon layers so as to make contact with said conductor layer; and

a region sandwiched between said first and second semiconductor layers containing impurity of a second conductivity type.

4. The semiconductor device according to claim 3, wherein said first semiconductor layer contains antimony as impurity of the first conductivity type.

5. The semiconductor device according to claim 3, wherein said second insulating film is a multilayer film made up of a silicon oxide film and a silicon nitride film.

6. The semiconductor device according to claim 3, wherein said second insulating film is a multilayer film made up of a silicon oxide film, a silicon nitride film and a silicon oxide film.

7. The semiconductor device according to claim 3, wherein said trench gate is formed by metal.

8. The semiconductor device according to claim 3, wherein said metal substrate is formed by stainless steel.