LED stack manufacturing method and its structure thereof
First Claim
1. A LED stack manufacturing method, producing LED by a twice bonding process for an epitaxial wafer layer grown on substrate bonded on a high-thermal-conductive substrate, comprising the steps of:
- (a) providing an epitaxial wafer growth substrate with an epitaxial wafer layer on top of the epitaxial wafer growth substrate, and defining an upper layer and a lower surface layer of the epitaxial wafer layer as an ohmic contact layer and an etch stop layer;
(b) bonding the a first bonded layer on the ohmic contact layer of the epitaxial wafer layer with a temporary bonded substrate, and removing the epitaxial growth substrate after the bonding of the temporary bonded substrate is completed;
(c) forming a second bonded layer on the etch stop layer after the epitaxial wafer growth substrate is removed;
(d) providing a high thermal conductive substrate with a third bonded layer formed on top of the high-thermal-conductive substrate;
(e) bonding the second bonded layer and the third bonded layer as described in steps (c) and (d) to form an alloy layer, and removing the temporary bonded substrate;
such arrangement couples the epitaxial wafer layer and the high-thermal-conductive substrate and makes the ohmic contact layer facing upward to improve the stability and optical output efficiency of the LED.
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Abstract
A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.
210 Citations
19 Claims
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1. A LED stack manufacturing method, producing LED by a twice bonding process for an epitaxial wafer layer grown on substrate bonded on a high-thermal-conductive substrate, comprising the steps of:
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(a) providing an epitaxial wafer growth substrate with an epitaxial wafer layer on top of the epitaxial wafer growth substrate, and defining an upper layer and a lower surface layer of the epitaxial wafer layer as an ohmic contact layer and an etch stop layer;
(b) bonding the a first bonded layer on the ohmic contact layer of the epitaxial wafer layer with a temporary bonded substrate, and removing the epitaxial growth substrate after the bonding of the temporary bonded substrate is completed;
(c) forming a second bonded layer on the etch stop layer after the epitaxial wafer growth substrate is removed;
(d) providing a high thermal conductive substrate with a third bonded layer formed on top of the high-thermal-conductive substrate;
(e) bonding the second bonded layer and the third bonded layer as described in steps (c) and (d) to form an alloy layer, and removing the temporary bonded substrate;
such arrangement couples the epitaxial wafer layer and the high-thermal-conductive substrate and makes the ohmic contact layer facing upward to improve the stability and optical output efficiency of the LED. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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