Methods, complexes, and systems for forming metal-containing films on semiconductor structures

• US 6,786,936 B2
• Filed: 05/25/2001
• Issued: 09/07/2004
• Est. Priority Date: 09/02/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US09/865,612
• Publication Number:
  US 20010055877A1
• Time in Patent Office: 1,201 Days
• Field of Search: 118/715, 118/723.E, 118/723.I, 118/726, 29/250.1, 438/618, 438/681, 117/104, 156/345, 556/176
• US Class Current: 29/25.01
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor comprising one or more complexes of the formula;

2. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

3. The system of claim 2 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₃₀)organic group.

4. The system of claim 2 wherein the complex is a monomer.

5. The system of claim 2 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

6. The system of claim 2 wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

7. The system of claim 2 wherein the precursor composition is a liquid.

8. The system of claim 2 wherein the metal is a Group VB metal.

9. The system of claim 8 wherein the metal is vanadium.

10. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

11. The system of claim 10 wherein each R¹, R², R³, and R⁴ is independently H or a (C₁-C₃₀)organic group.

12. The system of claim 10 wherein the complex is a monomer.

13. The system of claim 10 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

14. The system of claim 10 wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

15. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more liquid complexes of the formula;

16. The system of claim 15 wherein the deposition chamber is adapted for forming a metal-containing film comprising vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor depositional technique.

17. The system of claim 16 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.

18. The system of claim 16 wherein the precursor composition is vaporized in the presence of a carrier gas.

19. The system of claim 16 wherein the precursor composition is vaporized in the presence of a reaction gas.

20. The system of claim 19 wherein the reaction gas is selected from the group of H₂, SiH₄, Si₂H₆, NH₃, N₂H₄, PH₃, AsH₃, GeH₄, t-BuSbMe₂, H₂S, H₂Se, Te(allyl)₂, and combinations thereof.

21. The system of claim 16 wherein the metal-containing film is a Group IVB, VB, or VIB metal alloy film.