Silicide-silicon contacts for reduction of MOSFET source-drain resistances

• US 6,787,436 B1
• Filed: 05/15/2002
• Issued: 09/07/2004
• Est. Priority Date: 05/15/2002
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Maszara, Witold, Buynoski, Matthew S.
• Primary Examiner(s): Gurley, Lynne A.
• Application Number:
  US10/147,382
• Time in Patent Office: 846 Days
• Field of Search: 438/514, 438/520, 438/523, 438/528, 438/533, 438/630, 438/649-651, 438/655, 438/659, 438/664, 438/682-683
• US Class Current: 438/514
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence

Abstract

Methods for reducing the contact resistance presented by the interface between a silicide and a doped silicon region are presented. In a first method, a silicide layer and a doped silicon region form an interface. Either a damage-only species or a heavy, metal is implanted through the silicide layer into the doped silicon region immediately adjacent the interface. In a second method, a second metal is added to the refractory metal before formation of the silicide. After annealing the refractory metal and the doped silicon region, the second metal diffuses into the doped silicion region immediately adjacent the interface without forming additional phases in the silicide.

Claims

1. A method of reducing the contact resistance between a silicide layer and a doped silicon region, wherein the silicide layer and the doped silicon region form an interface comprising:

implanting a species through the silicide layer into the doped silicon region immediately below the interface after formation of the suicide layer, wherein the implanted species forms traps and induces states in the bandgap of the doped silicon region immediately below the interface such that a contact barrier between the silicide layer and the doped silicon region is reduced.

2. The method of claim 1, wherein the species is a heavy metal.

3. The method of claim 2, wherein the heavy metal is chosen from the group consisting of Cu, Ag, Au, and Fe.

4. The method of claim 3, wherein after the implanting act, the implanted heavy metal has a peak concentration in the doped silicon region within 150 Å

of the interface.

5. The method of claim 3, wherein after the implanting act, the implanted heavy metal has a peak concentration in the doped silicon region within 50 Å

of the interface.

6. The method of claim 3, wherein after the implanting act, the implanted heavy metal has damaged the crystal lattice of the doped silicon region such that the peak concentration of the damage occurs within 50 Å

of the interface.

7. A method of reducing the contact resistance between a silicide layer and a doped silicon region, wherein the silicide layer and the doped silicon region form an interface comprising:

implanting a species through the silicide layer into the doped silicon region immediately below the interface after formation of the silicide layer, wherein the implanted species reduces a contact barrier between the silicide layer and the doped silicon region by causing crystal structure damage in the doped silicon region immediately below the interface, wherein the crystal structure damage is not annealed by a silicide formation heat treatment.

8. The method of claim 7, wherein the species is a damage-only species.

9. The method of claim 8, wherein the damage-only species is selected from the group consisting of Si, Ge, Kr, Xe, Ar, Ne and He.

10. The method of claim 9, wherein, after the implanting act, the implanted damage-only species has a peak concentration in the doped silicon region within 150 Å

of the interface.

11. The method of claim 9, wherein after the implanting act, the implanted damage-only species has a peak concentration in the doped silicon region within 50 Å

of the interface.