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Fabrication method of semiconductor integrated circuit device

  • US 6,787,446 B2
  • Filed: 07/03/2002
  • Issued: 09/07/2004
  • Est. Priority Date: 08/07/2001
  • Status: Expired due to Term
First Claim
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1. A process of fabricating a semiconductor integrated circuit device comprising the steps of:

  • (a) forming a first interconnection made of a first conductive film containing copper as a main component over a main face of a semiconductor substrate;

    (b) forming a first insulating film containing silicon carbide or silicon carbonitride as a main component over the first interconnection;

    (c) forming a first interlayer insulating film over the first insulating film and subsequently dry-etching a portion of the first interlayer insulating film to make a portion of the first insulating film exposed;

    (d) using a first etching gas to dry-etch the first insulating film exposed in the step (c), to form a first interconnection groove wherein the surface of the first interconnection is exposed to its bottom;

    (e) forming a second interconnection made of a conductive film containing copper as a main component inside the first interconnection groove;

    (f) forming a second insulating film containing silicon carbide or silicon carbonitride as a main component over the second interconnection;

    (g) forming a second interlayer insulating film over the second insulating film and subsequently dry-etching a portion of the second interlayer insulating film to make a portion of the second insulating film exposed;

    (h) using a second etching gas to dry-etch the second insulating film exposed in the step (g), to form a second interconnection groove wherein the surface of the second interconnection is exposed to its bottom; and

    (i) forming a third interconnection made of a conductive film containing copper as a main component inside the second interconnection groove, wherein one of the first and second etching gases is a mixed gas of a third etching gas comprising at least one selected from the group made of SF6, HCl, HBr, Cl2, ClF3 and CF4 and a fourth etching gas comprising at least one selected from the group made of NH3, H2H4, and a mixed gas of N2 and H2;

    wherein the other thereof is a mixed gas of at least one of CHF3 and CF4, and N2; and

    wherein both of the first and second etching gases have a quality of substantially avoiding oxidizing the surface of the interconnection made of a conductive film containing copper.

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