Chemical vapor deposition methods, and atomic layer deposition method

• US 6,787,463 B2
• Filed: 01/10/2003
• Issued: 09/07/2004
• Est. Priority Date: 04/11/2002
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Mardian, Allen P.
• Primary Examiner(s): Ghyka, Alexander
• Application Number:
  US10/340,098
• Publication Number:
  US 20030194862A1
• Time in Patent Office: 606 Days
• Field of Search: 438/680, 438/681, 438/758, 438/778, 417/394, 417/395, 118/715, 137/1, 604/141
• US Class Current: 438/680
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence

Abstract

The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus includes a gas passageway having an inlet and an outlet. A variable volume accumulator reservoir is joined in fluid communication with the gas passageway. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a deposition chamber. A first deposition precursor is fed to an inlet of a variable volume accumulator reservoir. With the first deposition precursor therein, volume of the variable volume accumulator reservoir is decreased effective to expel first deposition precursor therefrom into the chamber under conditions effective to deposit a layer on the substrate.

Claims

1. A chemical vapor deposition method comprising:

positioning a semiconductor substrate within a deposition chamber;

feeding a first deposition precursor gas to an inlet of a variable volume accumulator reservoir; and

with the first deposition precursor gas therein, decreasing volume of the variable volume accumulator reservoir effective to expel first deposition precursor gas therefrom into the chamber under conditions effective to deposit a layer on the substrate.

2. The method of claim 1 comprising atomic layer deposition and depositing the layer as a monolayer, and forming successive monolayers over the substrate.

3. The method of claim 1 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being the same as the inlet.

4. The method of claim 1 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being different from the inlet.

5. The method of claim 1 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir.

6. The method of claim 1 wherein the decreasing comprises contracting a bellows.

7. The method of claim 1 wherein the decreasing comprises contracting flexible elastic walls in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

8. The method of claim 1 comprising decreasing volume at a substantially constant rate.

9. The method of claim 1 wherein the feeding occurs from a gas passageway through the inlet to the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the inlet and pressure within the variable volume accumulator reservoir substantially constant during said feeding.

10. The method of claim 9 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir, the maintaining comprising sensing pressure within the variable volume accumulator reservoir during said feeding and adjusting rate of volume change of the variable volume accumulator reservoir during said feeding based upon said sensed pressure.

11. The method of claim 1 wherein the expelling occurs through an outlet of the variable volume accumulator reservoir into a gas passageway from the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the outlet and pressure within the variable volume accumulator reservoir substantially constant during said decreasing.

12. The method of claim 11 wherein the maintaining comprises sensing pressure within the variable volume accumulator reservoir during said decreasing and adjusting rate of volume change of the variable volume accumulator reservoir during said decreasing based upon said sensed pressure.

13. The method of claim 11 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir.

14. The method of claim 1 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable piston.

15. The method of claim 1 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable spring loaded piston.

16. The method of claim 1 comprising feeding first deposition precursor gas to inlets of multiple variable volume accumulator reservoirs, and decreasing the volumes of the variable volume accumulator reservoirs effective to expel first deposition precursor gas therefrom into the chamber under conditions effective to deposit a layer on the substrate.

59. The method of claim 1 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

60. The method of claim 1 wherein the decreasing comprises contracting a bellows in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

17. An atomic layer deposition method comprising:

positioning a semiconductor substrate within an atomic layer deposition chamber;

feeding a first deposition precursor gas through an inlet valve to an inlet of a variable volume accumulator reservoir, an outlet valve from the variable volume accumulator reservoir being closed during said feeding; and

with the first deposition precursor gas therein, closing the inlet valve, opening the outlet valve and decreasing volume of the variable volume accumulator reservoir effective to expel first deposition precursor gas therefrom through the outlet valve and into the chamber under conditions effective to deposit a layer on the substrate.

18. The method of claim 17 comprising forming successive monolayers over the substrate.

19. The method of claim 17 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being the same as the inlet.

20. The method of claim 17 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being different from the inlet.

21. The method of claim 17 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir.

22. The method of claim 17 wherein the decreasing comprises contracting a bellows.

23. The method of claim 17 wherein the decreasing comprises contracting flexible elastic walls in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

24. The method of claim 17 comprising decreasing volume at a substantially constant rate.

25. The method of claim 17 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir, and wherein the feeding occurs from a gas passageway through the inlet to the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the inlet and pressure within the variable volume accumulator reservoir substantially constant during said feeding.

26. The method of claim 25 wherein the maintaining comprises sensing pressure within the variable volume accumulator reservoir during said feeding and adjusting rate of volume change of the variable volume accumulator reservoir during said feeding based upon said sensed pressure.

27. The method of claim 17 wherein the expelling occurs through an outlet of the variable volume accumulator reservoir into a gas passageway from the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the outlet and pressure within the variable volume accumulator reservoir substantially constant during said decreasing.

28. The method of claim 27 wherein the maintaining comprises sensing pressure within the variable volume accumulator reservoir during said decreasing and adjusting rate of volume change of the variable volume accumulator reservoir during said decreasing based upon said sensed pressure.

29. The method of claim 17 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir.

30. The method of claim 17 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable piston.

31. The method of claim 17 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable spring loaded piston.

32. The method of claim 17 comprising feeding first deposition precursor gas to inlets of multiple variable volume accumulator reservoirs, and decreasing the volumes of the variable volume accumulator reservoirs effective to expel first deposition precursor gas therefrom into the chamber under conditions effective to deposit a layer on the substrate.

61. The method of claim 17 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

62. The method of claim 17 wherein the decreasing comprises contracting a bellows in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

33. A chemical vapor deposition method comprising:

positioning a semiconductor substrate within a deposition chamber;

feeding a first deposition precursor gas to an inlet of a variable volume accumulator reservoir, the feeding occurring from a gas passageway through the inlet to the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the inlet and pressure within the variable volume accumulator reservoir substantially constant during said feeding; and

with the first deposition precursor gas therein, decreasing volume of the variable volume accumulator reservoir effective to expel first deposition precursor gas therefrom into the chamber under conditions effective to deposit a layer on the substrate, the expelling occurring through an outlet of the variable volume accumulator reservoir into the gas passageway from the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the outlet and pressure within the variable volume accumulator reservoir substantially constant during said decreasing.

34. The method of claim 33 comprising atomic layer deposition and depositing the layer as a monolayer, and forming successive monolayers over the substrate.

35. The method of claim 33 wherein the outlet is the same as the inlet.

36. The method of claim 33 wherein the outlet is different from the inlet.

37. The method of claim 33 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir.

38. The method of claim 33 wherein the decreasing comprises contracting a bellows.

39. The method of claim 33 wherein the decreasing comprises contracting flexible elastic walls in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

40. The method of claim 33 comprising decreasing volume at a substantially constant rate.

41. The method of claim 33 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir, and wherein the maintaining during said feeding and said decreasing comprises sensing pressure within the variable volume accumulator reservoir during said feeding and said decreasing, and adjusting rate of volume change of the variable volume accumulator reservoir during said feeding and said decreasing based upon sensed pressure.

42. The method of claim 33 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir.

43. The method of claim 33 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable piston.

44. The method of claim 33 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir by forcing the first precursor gas against a movable spring loaded piston.

63. The method of claim 33 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

64. The method of claim 33 wherein the decreasing comprises contracting a bellows in a direction generally transverse a direction of flow of the first deposition precursor gas from the variable volume accumulator.

45. A chemical vapor deposition method comprising:

positioning a semiconductor substrate within a deposition chamber;

feeding a first deposition precursor gas through an inlet valve to an inlet of a variable volume accumulator reservoir, an outlet valve from the variable volume accumulator reservoir being closed during said feeding, said feeding providing a first volume of the first deposition precursor gas within the variable volume accumulator reservoir at a first pressure;

after providing the first volume of the first deposition precursor gas within the variable volume accumulator at the first pressure, closing the inlet valve;

with the inlet and outlet valves closed, reducing the first volume of the first deposition precursor gas within the variable volume accumulator reservoir effective to increase the pressure to a second pressure; and

after the reducing, opening the outlet valve and decreasing volume of the variable volume accumulator reservoir effective to expel first deposition precursor gas therefrom through the outlet valve at an outlet pressure exceeding the first pressure and into the chamber under conditions effective to deposit a layer on the substrate.

46. The method of claim 45 comprising atomic layer deposition and depositing the layer as a monolayer, and forming successive monolayers over the substrate.

47. The method of claim 45 wherein the outlet pressure comprises the second pressure.

48. The method of claim 45 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being the same as the inlet.

49. The method of claim 45 wherein the variable volume accumulator comprises an outlet through which the first deposition precursor gas is expelled, said outlet being different from the inlet.

50. The method of claim 45 wherein the decreasing comprises moving a piston received within the variable volume accumulator reservoir.

51. The method of claim 45 wherein the decreasing comprises contracting a bellows.

52. The method of claim 45 wherein the decreasing comprises contracting flexible elastic walls in a direction generally transverse a direction of flow of the expelling first deposition precursor gas.

53. The method of claim 45 comprising decreasing volume at a substantially constant rate.

54. The method of claim 45 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir, and wherein the feeding occurs from a gas passageway through the inlet to the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the inlet and pressure within the variable volume accumulator reservoir substantially constant during said feeding.

55. The method of claim 54 wherein the maintaining comprises sensing pressure within the variable volume accumulator reservoir during said feeding and adjusting rate of volume change of the variable volume accumulator reservoir during said feeding based upon said sensed pressure.

56. The method of claim 45 wherein the expelling occurs through an outlet of the variable volume accumulator reservoir into a gas passageway from the variable volume accumulator reservoir, and further comprising maintaining pressure within the gas passageway proximate the outlet and pressure within the variable volume accumulator reservoir substantially constant during said decreasing.

57. The method of claim 56 wherein the maintaining comprises sensing pressure within the variable volume accumulator reservoir during said decreasing and adjusting rate of volume change of the variable volume accumulator reservoir during said decreasing based upon said sensed pressure.

58. The method of claim 45 wherein the feeding comprises increasing the volume of the variable volume accumulator reservoir.