Semiconductor component with integrated circuit, cooling body, and temperature sensor

• US 6,787,870 B2
• Filed: 05/23/2003
• Issued: 09/07/2004
• Est. Priority Date: 06/07/2002
• Status: Expired due to Fees

• Current Assignee: Heraeus Sensor Technology GmbH (Heraeus Holding GMBH)
• Original Assignee: Heraeus Sensor Technology GmbH (Heraeus Holding GMBH)
• Inventors: Ullrich, Karlheinz, Wienand, Karl-Heinz
• Primary Examiner(s): Eckert, George
• Assistant Examiner(s): Warren, Matthew E.
• Application Number:
  US10/444,215
• Publication Number:
  US 20030227067A1
• Time in Patent Office: 473 Days
• Field of Search: 257/467, 257/470, 257/706, 257/713, 257/717
• US Class Current: 257/467
• CPC Class Codes: G01K 7/183 characterised by the use of the resistive element
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component with an integrated circuit has a cooling body as a heat sink and a temperature sensor thermally connected thereto, whose resistance is dependent on temperature. The temperature sensor contains a thin film measuring resistor, which is applied to an electrically insulating surface of a foil-like substrate, and the total thickness of the temperature sensor lies in a range of about 10 μm to 100 μm. The thin film measuring resistor is formed as a planar component, with the temperature sensor being arranged between the integrated circuit and the cooling body. The thin film measuring resistor is provided on one side with a thermal coupling layer bordering on the cooling body, while on the other side the resistor has a substrate bordering on a heat distributor, which at least partially surrounds the integrated circuit.

Claims

1. A semiconductor component comprising an integrated circuit (1) thermally connected to a temperature sensor (7) whose resistance is dependent on temperature, and a cooling body (13) provided as a heat sink, wherein the temperature sensor (7) comprises a thin film measuring resistor (15) applied to an electrically insulating surface of a foil-form substrate (16), has a total thickness in a range of about 10 to 100 μ

m, and is thermally coupled to the cooling body (13).

2. The semiconductor component according to claim 1, wherein the thin film measuring resistor (15) is formed as a planar element.

3. The semiconductor component according to claim 1, wherein the temperature sensor (7) is arranged between the integrated circuit (1) and the cooling body (13).

4. The semiconductor component according to claim 1, wherein the foil-form substrate (16) comprises metal.

5. The semiconductor component according to claim 4, wherein the electrically insulating surface is formed from an insulating layer (17) having a thickness in a range of about 2 to 5 μ

m.

6. The semiconductor component according to claim 5, wherein the insulating layer (17) comprises silicon oxide or aluminum oxide.

7. The semiconductor component according to claim 6, wherein the insulating layer (17) is applied by physical vapor deposition.

8. The semiconductor component according to claim 1, wherein the foil-form substrate (16) is selected from the group consisting of nickel, a nickel alloy, and an iron alloy containing chromium and aluminum.

9. The semiconductor component according to claim 8, wherein the foil-form substrate (16) has a thickness in a range of about 30 to 80 μ

m.

10. The semiconductor component according to claim 1, wherein a passivation layer (18) comprising silicon oxide or aluminum oxide is applied to the thin film measuring resistor (15).

11. The semiconductor component according to claim 10, wherein the passivation layer (18) has a thickness in a range of about 1 to 5 μ

m.

12. The semiconductor component according to claim 10, wherein the passivation layer (18) is applied by physical vapor deposition.

13. The semiconductor component according to claim 1, wherein the thin film measuring resistor (15) is provided on one side with a thermal coupling layer (12) bordering on the cooling body (13), and on an opposite side has a substrate bordering on a heat distributor (4) which is arranged adjacent to the integrated circuit (1).

14. The semiconductor component according to claim 13, wherein the heat distributor (4) at least partially surrounds the integrated circuit (1).

15. The semiconductor component according to claim 13, wherein an electrically insulating layer having good thermal conductivity is arranged between a portion of the integrated circuit (1) and the heat distributor (4).