Multiple reflectivity band reflector

• US 6,788,466 B2
• Filed: 07/18/2002
• Issued: 09/07/2004
• Est. Priority Date: 03/01/2001
• Status: Expired due to Term

• Current Assignee: Applied Optoelectronics
• Original Assignee: Applied Optoelectronics
• Inventors: Lin, Chih-Hsiang, Anselm, Klaus Alexander, Hwang, Wen-Yen, Baillargeon, James N.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US10/198,683
• Publication Number:
  US 20030076866A1
• Time in Patent Office: 782 Days
• Field of Search: 359/589, 372/99
• US Class Current: 359/589
• CPC Class Codes: H01S 3/1303 by using a passive reference, e.g. absorption cell H01S3/139 takes precedence
• CPC Class Codes: H01S 3/131 by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
• CPC Class Codes: H01S 3/1392 by using a passive reference, e.g. absorption cell H01S3/1396, H01S3/1398 take precedence
• CPC Class Codes: H01S 5/0687 Stabilising the frequency of the laser

Abstract

A multiple reflectivity band reflector (MRBR) includes a stack of dielectric layers, arranged so that the reflector has a reflectivity profile comprising a plurality of reflectivity bands, e.g. at least first and second wavelength bands with reflectivity above a lasing threshold reflectivity, separated by a third wavelength band between the first and second wavelength bands having reflectivity below the lasing threshold reflectivity. A laser having at least a first mirror and an MRBR as the second mirror has a laser cavity, at least a portion of which is defined by the first mirror and the MRBR. An active region located within the laser cavity contains a material that is capable of stimulated emission at one or more wavelengths in the first and second wavelength bands. The gain spectrum of the laser is adjusted to select one of the first and second wavelength bands, thereby providing for lasing at a wavelength within the selected wavelength band. The laser may be, e.g., a monolithic VCSEL or a one-section or two-section external-cavity VECSEL having the MRBR as one of its cavity mirrors.

Claims

1. A multiple reflectivity band reflector, comprising a plurality of layers of material arranged in parallel such that the reflector has:

a first wavelength band with reflectivity above a threshold reflectivity, wherein the threshold reflectivity is at least 99%;

a second wavelength band with reflectivity above the threshold reflectivity; and

a third wavelength band including wavelengths between the first and second wavelength bands having reflectivity below the threshold reflectivity.

2. The reflector of claim 1, wherein the layers of material are dielectric layers.

3. The reflector of claim 1, wherein the first and second wavelength bands are in the 1500-1600 nm wavelength range.

4. The reflector of claim 1, having at least six wavelength bands in the 1500-1600 nm wavelength range with reflectivity above the threshold reflectivity with at least one wavelength band with reflectivity below the threshold reflectivity separating each sequential pair of the at least six wavelength bands.

5. The reflector of claim 4, wherein the plurality of layers comprises at least 60 dielectric layers.

6. The reflector of claim 5, wherein the plurality of layers include Al₂O₃ layers, TiO₂ layers, and SiO₂ layers.

7. The reflector of claim 6, wherein the plurality of layers correspond to the layer formula EABCD(ABC)⁶⁰ABCD(ABC)⁶⁰AB with the layer identifiers corresponding to the following:

A representing Al₂O₃, B representing TiO₂, D representing SiO₂, C representing Si, and E representing Al, with layers A-D having substantially the same thickness after adjustment for refractive index.

8. The reflector of claim 6, having at least thirteen wavelength bands in the 1500-1600 nm wavelength range with reflectivity above the threshold reflectivity with at least one wavelength band with reflectivity below the threshold reflectivity separating each sequential pair of the at least thirteen wavelength bands.

9. The reflector of claim 6, wherein the plurality of layers are based on the layer formula ABC(ABCD)²(ABDC)⁶⁸(ABCD) with the layer identifiers corresponding to the following:

A representing Al₂O₃, B representing TiO₂, C representing SiO₂, and D representing Si, with layers A-C having substantially the same thickness after adjustment for refractive index and layer D having a thickness substantially 1/0.75 times that of layer A after adjustment for refractive index.

10. The reflector of claim 1, having at least five wavelength bends in a 5 nm wavelength range with reflectivity above the threshold reflectivity with at least one wavelength band with reflectivity below the threshold reflectivity separating each sequential pair of the at least five wavelength hands.

11. The reflector of claim 1, wherein the first wavelength band and second wavelength band both include wavelengths at which reflectivity is greeter than 99.98%, but only include such wavelengths over a range of less than 10 nm.

12. The reflector of claim 1, wherein the first wavelength band and second wavelength band each have reflectivity maxima and both bands include wavelengths at which reflectivity is greater than 99.6% and wherein the wavelength band reflectivity maxima are located less than 20 nm apart.

13. The reflector of claim 1, wherein the threshold reflectivity is about 99%.

14. The reflector of claim 1, wherein the threshold reflectivity is about 99.5%.

15. The reflector of claim 1, having at least five wavelength bands, each band having a reflective maxima, the length of wavelength difference between the reflective maxima for neighboring wavelength bands varying by less than 50%.

16. A multiple reflectivity band reflector comprising:

means for reflecting light in a first wavelength band at a reflectivity above a threshold reflectivity, wherein the threshold reflectivity is at least 99%;

means for reflecting light ma second wavelength band at a reflectivity above the threshold reflectivity; and

means for reflecting light in a third wavelength band including wavelengths between the first and second wavelength bands at a reflectivity below the threshold reflectivity.

17. The reflector of claim 16, wherein the reflector consists of a plurality of layers of material arranged in parallel.

18. The reflector of claim 17, wherein the plurality of layers comprises at least 60 dielectric layers.

19. The reflector of claim 16, wherein the plurality of layers correspond to the layer formula EABCD(ABC)⁶⁰ABCD(ABC)⁶⁰AB with the layer identifiers corresponding to the following:

A representing Al₂O₃, B representing TiO₂, C representing SiO₂, D representing Si, and E representing Al, with layer. A-D having substantially the same thickness after adjustment for refractive index.

20. The reflector of claim 16, wherein the threshold reflectivity is about 99.5%.