Micro inertia sensor and method of manufacturing the same
First Claim
1. A micro inertia sensor comprisinga lower glass substrate;
- a lower silicon including a first border, a first fixed point and a side movement sensing structure;
an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and a sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure;
a bonded layer by an eutectic bonding between the upper silicon and the lower silicon; and
an upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed.
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Abstract
The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
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Citations
13 Claims
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1. A micro inertia sensor comprising
a lower glass substrate; -
a lower silicon including a first border, a first fixed point and a side movement sensing structure;
an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and a sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure;
a bonded layer by an eutectic bonding between the upper silicon and the lower silicon; and
an upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed. - View Dependent Claims (2, 3, 4, 5)
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6. A micro inertia sensor comprising:
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a lower substrate;
a device wafer comprising a lower silicon including a structure on which a first border, a first fixed point and a first sensing electrode for sensing a capacity in a horizontal direction are formed on the same surface of the lower substrate;
an upper silicon including a second border, a second fixed point and a second sensing electrode for sensing a capacity in a vertical direction between the structure, which correspond to the first border, the first fixed point and the structure on the lower silicon, respectively;
a cap wafer, being positioned on an upper portion of the upper silicon, and including an upper substrate providing a via hole connected to a metal wiring; and
a bonded layer by an eutectic bonding between the upper silicon and the lower silicon. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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Specification