Temperature sensor and method for operating a temperature sensor
First Claim
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1. A temperature sensor, comprising:
- a first FET transistor circuit and a second FET transistor circuit each having a gate voltage and a temperature-independent operating point at which, for a constant drain-source current, the gate voltage is essentially temperature-independent;
a circuit for operating said first FET transistor circuit at a first operating point being different from said temperature-independent operating point, said circuit also being for operating said second FET transistor circuit at a second operating point being different from said temperature-independent operating point;
said first FET transistor circuit providing a first voltage;
said second FET transistor circuit providing a second voltage; and
a difference between the first voltage and the second voltage being evaluated as a measure of a temperature at a transistor circuit selected from a group consisting of said first FET transistor circuit and said second FET transistor circuit.
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Abstract
The invention relates to a temperature sensor having a first FET transistor circuit and a second FET transistor circuit and also to a method for operating a temperature sensor. Both FET transistor circuits are operated at an operating point that lies outside the temperature-independent operating point. The difference between the voltages at the first and second FET transistor circuits is evaluated as a measure of the temperature at one of the FET transistor circuits. The invention enables the temperature sensor to provide a relatively large output signal even in the case of only small changes in temperature.
298 Citations
22 Claims
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1. A temperature sensor, comprising:
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a first FET transistor circuit and a second FET transistor circuit each having a gate voltage and a temperature-independent operating point at which, for a constant drain-source current, the gate voltage is essentially temperature-independent;
a circuit for operating said first FET transistor circuit at a first operating point being different from said temperature-independent operating point, said circuit also being for operating said second FET transistor circuit at a second operating point being different from said temperature-independent operating point;
said first FET transistor circuit providing a first voltage;
said second FET transistor circuit providing a second voltage; and
a difference between the first voltage and the second voltage being evaluated as a measure of a temperature at a transistor circuit selected from a group consisting of said first FET transistor circuit and said second FET transistor circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
said first operating point is above said temperature-independent operating point; and
said second operating point is below said temperature-independent operating point.
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3. The temperature sensor according to claim 1, wherein:
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said first operating point is above said temperature-independent operating point; and
said second operating point is above said temperature-independent operating point.
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4. The temperature sensor according to claim 1, wherein:
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said first operating point is below said temperature-independent operating point; and
said second operating point is below said temperature-independent operating point.
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5. The temperature sensor according to claim 1, wherein:
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said circuit includes a resistor connected in series with said first FET transistor circuit; and
said circuit includes a resistor connected in series with said second FET transistor circuit.
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6. The temperature sensor according to claim 1, wherein:
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said first FET transistor circuit includes a FET transistor that is connected to form a diode; and
said second FET transistor circuit includes a FET transistor that is connected to form a diode.
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7. The temperature sensor according to claim 1, wherein:
a transistor circuit selected from a group consisting of said first FET transistor circuit and said second FET transistor circuit includes a plurality of FET transistors connected in series.
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8. The temperature sensor according to claim 1, wherein:
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said first operating point is below said temperature-independent operating point; and
said second operating point is above said temperature-independent operating point.
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9. The temperature sensor according to claim 1, comprising:
an amplifier circuit for detecting the difference between the first voltage and the second voltage and for converting the difference into a control voltage.
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10. The temperature sensor according to claim 9, comprising:
a further amplifier circuit receiving the control voltage.
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11. The temperature sensor according to claim 1, wherein:
said circuit includes a current generator that feeds constant currents to said first FET transistor circuit and to said second FET transistor circuit.
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12. The temperature sensor according to claim 11, wherein:
said current generator includes a current mirror that defines the first operating point and the second operating point.
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13. The temperature sensor according to claim 11, wherein:
said current generator includes two coupled current sources that feed said first FET transistor circuit and said second FET transistor circuit.
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14. The temperature sensor according to claim 13, wherein:
said current generator includes a current mirror that defines the first operating point and the second operating point.
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15. A temperature sensor, comprising:
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a first FET transistor circuit and a second FET transistor circuit each having a gate voltage and a temperature-independent operating point at which, for a constant drain-source current, the gate voltage is essentially temperature-independent;
a circuit for operating said first FET transistor circuit at a first operating point being different from said temperature-independent operating point, said circuit also being for operating said second FET transistor circuit at a second operating point being different from said temperature-independent operating point;
said first FET transistor circuit providing a first voltage;
said second FET transistor circuit providing a second voltage;
a difference between the first voltage and the second voltage being evaluated as a measure of a temperature at a transistor circuit selected from a group consisting of said first FET transistor circuit and said second FET transistor circuit; and
an amplifier circuit detecting a difference in said gate voltages at said first and said second FET transistor circuits, and for converting the difference into a control voltage for controlling the current source of a further amplifier circuit. - View Dependent Claims (16)
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17. A method for operating a temperature sensor, which comprises:
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providing the temperature sensor with a first FET transistor circuit, a second FET transistor circuit, and a circuit for operating the first FET transistor circuit and the second FET transistor circuit;
evaluating a difference between a voltage at the first FET transistor circuit and a voltage at the second FET transistor circuit as a measure of a temperature at a transistor circuit selected from a group consisting of the first FET transistor circuit and the second FET transistor circuit;
providing the first FET transistor circuit and the second FET transistor circuit with a temperature-independent operating point at which, for a constant drain-source current, a gate voltage is essentially temperature-independent; and
operating the first FET transistor circuit and the second FET transistor circuit at a respective operating point that is different from the temperature-independent operating point. - View Dependent Claims (18, 19, 20, 21)
operating the first FET transistor circuit above the temperature-independent operating point; and
operating the second FET transistor circuit below the temperature-independent operating point.
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19. The method according to claim 17, which comprises:
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operating the second FET transistor circuit above the temperature-independent operating point; and
operating the first FET transistor circuit below the temperature-independent operating point.
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20. The method according to claim 17, which comprises:
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operating the first FET transistor circuit above the temperature-independent operating point; and
operating the second FET transistor circuit above the temperature-independent operating point.
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21. The method according to claim 17, which comprises:
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operating the first FET transistor circuit below the temperature-independent operating point; and
operating the second FET transistor circuit below the temperature-independent operating point.
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22. A method for operating a temperature sensor, which comprises:
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providing the temperature sensor with a first FET transistor circuit, a second FET transistor circuit, and a circuit for operating the first FET transistor circuit and the second FET transistor circuit;
evaluating a difference between a voltage at the first FET transistor circuit and a voltage at the second FET transistor circuit as a measure of a temperature at a transistor circuit selected from a group consisting of the first FET transistor circuit and the second FET transistor circuit;
providing the first FET transistor circuit and the second FET transistor circuit with a temperature-independent operating point at which, for a constant drain-source current, a gate voltage is essentially temperature-independent; and
operating the first FET transistor circuit and the second FET transistor circuit at a respective operating point that is different from the temperature-independent operating point;
detecting the difference between the first voltage and the second voltage and converting the difference into a control voltage using an amplifier circuit; and
controlling a further amplifier circuit using the control voltage.
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Specification