Method for capacitively coupling electronic devices

• US 6,790,704 B2
• Filed: 07/17/2001
• Issued: 09/14/2004
• Est. Priority Date: 12/29/1997
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Doyle, Brian, Vu, Quat T., Fraser, David B.
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): Berezny, Nema
• Application Number:
  US09/908,016
• Publication Number:
  US 20010039075A1
• Time in Patent Office: 1,155 Days
• Field of Search: 438/109, 438/622, 438/396, 257/506, 257/725, 257/777
• US Class Current: 438/109
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Abstract

A method for electrically coupling a first set of electrically conductive pads on a first semiconductor substrate to a second set of electrically conductive pads on a second semiconductor substrate is described. Dielectric material of a first thickness is deposited on at least one set of the first and second sets of electrically conductive pads. The first and second semiconductor substrates are then attached together such that such that the first and second sets of pads are substantially aligned parallel to one another and such that the dielectric material is disposed between the first and second sets of electrically conductive pads.

Claims

1. A method comprising:

depositing a dielectric material of a first thickness on at least one of a first set of electrically conductive pads on a first semiconductor substrate and a second set of electrically conductive pads on a second semiconductor substrate; and

attaching said first semiconductor substrate to said second semiconductor substrate to substantially align said first and second sets of pads parallel to one another, wherein said dielectric material is disposed in direct contact between said first and second sets of electrically conductive pads to form a capacitor; and

retaining both the first and second semiconductor substrates after attaching said first semiconductor substrate to said second semiconductor substrate, wherein attaching said first semiconductor substrate to said second semiconductor substrate includes heating said first and second semiconductor substrates to bond said first and second dielectric films, wherein a microprocessor comprises one of said first and second semiconductor substrates.

2. The method of claim 1 wherein depositing a dielectric material of a first thickness on at least one set of said first and second sets of electrically conductive pads includes depositing a first dielectric film on a first surface of said first semiconductor substrate and a second dielectric film on a second surface of said second semiconductor substrate.

3. The method of claim 1, wherein depositing a dielectric material comprises depositing a plurality of dielectric layers.

4. The method of claim 1, wherein a cache memory comprises the other of said first and second semiconductor substrates.

5. A method comprising:

depositing a dielectric material on at least one of an output pad on a first semiconductor device and an input pad on a second semiconductor device;

aligning said output pad with said input pad substantially parallel to one another, wherein said dielectric material is disposed in direct contact between said output and input pads; and

electrically coupling said output and input pads using said dielectric material to form a capacitor, the capacitor comprising;

the output pad of the first semiconductor device;

the input pad of the second semiconductor device; and

the dielectric material, the dielectric material isolating the input and output pads, wherein one of said semiconductor devices comprises a microprocessor.

6. The method of claim 5 wherein said other semiconductor device is a cache memory.

7. The method of claim 6, wherein depositing a dielectric material comprises depositing a plurality of dielectric layers.

8. The method of claim 5 wherein said input and output pads comprise a metal.

9. The method of claim 5 wherein said dielectric material comprises silicon dioxide.

10. The method of claim 5 wherein said dielectric material comprises Barium titanate.

11. The method of claim 5, wherein depositing a dielectric material comprises depositing a plurality of dielectric layers.