Method and device for controlled cleaving process
DCFirst Claim
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1. A process for forming substrates, said process comprising:
- providing a substrate having a stressed region along a first plane associated with the substrate and an implanted region along a second plane associated with a depth within the substrate, the substrate having a surface region;
bonding the surface region of the substrate to a handle substrate;
using a controlled cleaving action to initiate a cleave along the depth of the substrate; and
propagating a cleave front to free a portion of said substrate.
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
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24 Claims
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1. A process for forming substrates, said process comprising:
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providing a substrate having a stressed region along a first plane associated with the substrate and an implanted region along a second plane associated with a depth within the substrate, the substrate having a surface region;
bonding the surface region of the substrate to a handle substrate;
using a controlled cleaving action to initiate a cleave along the depth of the substrate; and
propagating a cleave front to free a portion of said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification