Method of manufacturing a semiconductor device

• US 6,790,749 B2
• Filed: 09/12/2002
• Issued: 09/14/2004
• Est. Priority Date: 10/09/1992
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Takemura, Yasuhiko, Zhang, Hongyong
• Primary Examiner(s): Coleman, W. David
• Application Number:
  US10/241,624
• Publication Number:
  US 20030006414A1
• Time in Patent Office: 733 Days
• Field of Search: 438/151, 438/486, 438/790, 438/308, 438/487, 438/795
• US Class Current: 438/486
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: Y10S 257/90 MOSFET type gate sidewall insulating spacer

Abstract

An object of this invention is to provide a semiconductor device manufacturing method in which a semiconductor film is formed over a substrate, the semiconductor film is crystallized by irradiating a laser light, a silicon oxide film is formed in contact with the crystalline semiconductor film by using organic silane, a gate electrode is formed in contact with the silicon oxide film, an impurity element is introduced into the crystalline semiconductor film, the impurity element is activated, an interlayer insulating film is formed over the gate electrode, and then a wiring comprising aluminum is formed over the interlayer insulating film.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by irradiating a laser light;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by heating;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

2. A method according to claim 1, wherein the impurity element is phosphorus.

3. A method according to claim 1, wherein the organic silane is TEOS.

4. A method according to claim 1, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.

5. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by irradiating a laser light;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by irradiating an infrared light;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

6. A method according to claim 5, wherein the impurity element is phosphorus.

7. A method according to claim 5, wherein the organic silane is TEOS.

8. A method according to claim 5, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.

9. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by irradiating a laser light;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by irradiating a laser light;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

10. A method according to claim 9, wherein the impurity element is phosphorus.

11. A method according to claim 9, wherein the organic silane is TEOS.

12. A method according to claim 9, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.

13. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by heating;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by heating;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

14. A method according to claim 13, wherein the impurity element is phosphorus.

15. A method according to claim 13, wherein the organic silane is TEOS.

16. A method according to claim 13, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.

17. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by heating;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by irradiating an infrared light;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

18. A method according to claim 17, wherein the impurity element is phosphorus.

19. A method according to claim 17, wherein the organic silane is TEOS.

20. A method according to claim 17, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.

21. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor film over a substrate;

crystallizing the semiconductor film by heating;

forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;

forming a gate electrode in contact with the silicon oxide film;

introducing an impurity element into the crystalline semiconductor film; and

activating the impurity element in the crystalline semiconductor film by irradiating a laser light;

forming an interlayer insulating film over the gate electrode; and

forming a wiring comprising aluminum over the interlayer insulating film.

22. A method according to claim 21, wherein the impurity element is phosphorus.

23. A method according to claim 21, wherein the organic silane is TEOS.

24. A method according to claim 21, wherein the semiconductor device is incorporated into a device selected from the group consisting of a liquid crystal display device, a SOI integrated circuit, a microprocessors, a microcomputer and a semiconductor memory.