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Integrated semiconductor circuit device having Schottky barrier diode

  • US 6,791,154 B2
  • Filed: 01/25/2002
  • Issued: 09/14/2004
  • Est. Priority Date: 02/02/2001
  • Status: Expired due to Fees
First Claim
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1. An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single silicon substrate, wherein a Schottky barrier, which is a component of the Schottky barrier diode, is formed of a silicide layer, another silicide layer is formed on source/drain regions and a gate electrode, which are components of the MOS transistor, and both of the silicide layers are layers formed at the same time in self-alignment of the same materials.

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