Integrated semiconductor circuit device having Schottky barrier diode

• US 6,791,154 B2
• Filed: 01/25/2002
• Issued: 09/14/2004
• Est. Priority Date: 02/02/2001
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Matsumoto, Hironori, Ohmi, Toshinori
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): GREENE, PERSHELLE L
• Application Number:
  US10/054,823
• Publication Number:
  US 20020105046A1
• Time in Patent Office: 963 Days
• Field of Search: 257/486, 257/471, 257/485, 257/280, 257/281, 257/288
• US Class Current: 257/486
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors

Abstract

An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single silicon substrate, wherein a Schottky barrier, which is a component of the Schottky barrier diode, is made of a silicide layer.

Claims

1. An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single silicon substrate, wherein a Schottky barrier, which is a component of the Schottky barrier diode, is formed of a silicide layer, another silicide layer is formed on source/drain regions and a gate electrode, which are components of the MOS transistor, and both of the silicide layers are layers formed at the same time in self-alignment of the same materials.

2. A device according to claim 1, wherein the silicide layer is made of titanium silicide, tungsten silicide, cobalt silicide or platinum silicide.

3. A device according to claim 2, wherein the silicide layer shows a C54 phase.

4. An IC module including an integrated semiconductor circuit device according to claim 1.

5. An IC card including an IC module according to claim 4.