Photoelectric conversion functional element and production method thereof
First Claim
1. A method for producing an electro luminescence device, comprising the steps of:
- providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
forming a pn junction by heat treating and thermally diffusing the diffusion source; and
forming electrodes on front and rear of the substrate;
wherein the diffusion source disposed on the front surface of the substrate includes at least one of silicon and carbon, and comprises at least one of Cl, Br, I or alloy thereof.
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Abstract
An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation density or a low inclusion density; forming a pn junction by thermally diffusing an element converting the substrate of a first conduction type into the one of a second conduction type from a front surface of the substrate; and forming electrodes on front and rear of the substrate. A diffusion source including an element converting the substrate of a first conduction type into the one of a second conduction type is disposed on the front surface of the substrate, preventing forming of a defect compensating an impurity level which is formed in the substrate by the element during a diffusion process, and gettering impurity on the front surface of the substrate by the diffusion source. Thereby, the conduction type of the Group II-VI compound semiconductor can be controlled and the electro luminescence device having superior light emission characteristics can be stably produced.
109 Citations
33 Claims
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1. A method for producing an electro luminescence device, comprising the steps of:
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providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
forming a pn junction by heat treating and thermally diffusing the diffusion source; and
forming electrodes on front and rear of the substrate;
wherein the diffusion source disposed on the front surface of the substrate includes at least one of silicon and carbon, and comprises at least one of Cl, Br, I or alloy thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 32, 33)
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13. A method for producing an electro luminescence device, comprising the steps of:
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providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
forming a pn junction by heat treating and thermally diffusing the diffusion source; and
forming electrodes on front and rear of the substrate;
wherein the diffusion source is disposed on a substrate plane having plane orientation from which a flat plane is obtained after etching, and wherein before the diffusion source is disposed, the front surface of the substrate is chemically etched. - View Dependent Claims (14, 15, 16, 17)
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18. A method for producing an electro luminescence device, comprising the steps of:
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providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
forming a pn junction by heat treating and thermally diffusing the diffusion source; and
forming electrodes on front and rear of the substrate;
wherein a film thickness of the diffusion source is from 5 nm to 50 nm. - View Dependent Claims (19, 20, 21, 22, 23)
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24. An electro luminescence device comprising a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table,
wherein the electro luminescence device is produced by disposing a diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor on a front surface of the substrate; - forming a pn junction by heat treating and thermally diffusing the diffusion source;
forming electrodes on both surfaces of the substrate; and
etching the front surface of the substrate before depositing the diffusion source; and
whereinthe compound semiconductor crystal substrate has carrier density of from 1×
1017 cm−
3 to 5×
1018 cm−
3.- View Dependent Claims (25, 26, 27)
- forming a pn junction by heat treating and thermally diffusing the diffusion source;
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28. An electro luminescence device comprising a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table,
wherein the electro luminescence device is produced by disposing a diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor on a front surface of the substrate; - forming a pn junction by heat treating and diffusing the diffusion source; and
forming electrodes on both surfaces of the substrate, anda depth of the diffusion is not less than 0.3 μ
m and not more than 2.0 μ
m from the front surface of the substrate.- View Dependent Claims (29, 30, 31)
- forming a pn junction by heat treating and diffusing the diffusion source; and
Specification