Magnetic field sensor utilizing anomalous hall effect magnetic film

• US 6,791,792 B2
• Filed: 02/19/2002
• Issued: 09/14/2004
• Est. Priority Date: 08/24/2001
• Status: Expired due to Fees

• Current Assignee: Hitachi Global Storage Technologies Japan Limited (Western Digital Corporation)
• Original Assignee: Hitachi, Ltd.
• Inventors: Takahashi, Hiromasa
• Primary Examiner(s): EVANS, JEFFERSON A
• Application Number:
  US10/076,546
• Publication Number:
  US 20030039062A1
• Time in Patent Office: 938 Days
• Field of Search: 360/112, 324/251
• US Class Current: 360/112
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/374 Integrated structures
• CPC Class Codes: G11C 11/18 using Hall-effect devices

Abstract

A magnetic field sensor for sensing an applied magnetic field by utilizing a Hall effect. Used, as a sensor portion, are compound materials such as FeN showing a significant anomalous Hall effect, and materials containing magnetic properties such as a magnetic semiconductor having a zincblende structure and oxide having a perovskite structure. A device structure of the magnetic field sensor is adopted, in which by providing a current terminal to a film and a voltage terminal thereof respectively in a film thickness direction and in an in-plane direction, the magnetic field can be guided into the in-plane direction.

Claims

1. A magnetic field sensor comprising:

a film of a first electrode;

a magnetic film showing an anomalous Hall effect, formed on said film of the first electrode;

a film of a second electrode formed on said magnetic film; and

third and fourth electrodes respectively connected to two regions provided so as to be apart from each other along a film plane direction of said magnetic film,

wherein said magnetic film is one of a ferromagnetic film and an anti-magnetic film formed of a compound consisting of at least one type of element selected among iron, cobalt, nickel, manganese, vanadium and chromium, and a semiconductor material having a zincblende type structure, which contains at least one of gallium, arsenic, indium, antimony, silicon, germanium, tellurium, zinc oxide and titanium oxide.

4. The magnetic field sensor according to claim 1, 2 or 3, wherein said magnetic film is one of a ferromagnetic film and an antiferromagnetic film which contains at least one type of element selected among iron, cobalt, nickel and manganese.

2. A magnetic field sensor comprising:

a film of a first electrode;

a magnetic film showing an anomalous Hall effect, formed on said film of the first electrode;

a film of a second electrode formed on said magnetic film; and

third and fourth electrodes respectively connected to two regions provided so as to be apart from each other along a film plane direction of said magnetic film,

wherein said magnetic film is one of a ferromagnetic film and an anti-magnetic film formed by laminating a semiconductor material which contains at least one type of element selected among iron, cobalt, nickel, manganese, vanadium and chromium, and which contains at least one of gallium, arsenic, indium, antimony, silicon, germanium, tellurium, zinc oxide and titanium oxide.

3. A magnetic field sensor comprising:

a film of a first electrode;

a magnetic film showing an anomalous Hall effect, formed on said film of the first electrode;

a film of a second electrode formed on said magnetic film; and

third and fourth electrodes respectively connected to two regions provided so as to be apart from each other along a film plane direction of said magnetic film,

wherein said magnetic film is one of a ferromagnetic film and an antiferromagnetic film having a perovskite structure which contains not less than three elements, the elements being selected among lanthanum, strontium, calcium, manganese, boron, copper and oxygen.

5. A magnetic field sensor comprising:

a film of a first electrode;

a magnetic film showing an anomalous Hall effect, formed on said film of the first electrode;

a film of a second electrode formed on said magnetic film; and

third and fourth electrodes respectively connected to two regions provided so as to be apart from each other along a film plane direction of said magnetic film,

wherein a current is allowed to flow between said first and second electrodes and a voltage generated between said third and fourth electrodes is detected.

6. A magnetic field sensor comprising:

a film of a first electrode;

a magnetic film showing an anomalous Hall effect, formed on said film of the first electrode;

a film of a second electrode formed on said magnetic film; and

third and fourth electrodes respectively connected to two regions provided so as to be apart from each other along a film plane direction of said magnetic film,

wherein a current is allowed to flow between said third and fourth electrodes and a voltage generated between said first and second electrodes is detected.