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Plasma processing apparatus and method capable of performing uniform plasma treatment by control of excitation power

  • US 6,792,889 B2
  • Filed: 01/28/2003
  • Issued: 09/21/2004
  • Est. Priority Date: 01/30/2002
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus, comprising:

  • an electrode pair of a plasma excitation electrode for forming a plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be plasma-treated being placed therebetween;

    a plasma processing chamber accommodating the electrode pair;

    an RF generator;

    a feeding path for feeding RF power from the RF generator to the plasma excitation electrode;

    an impedance matching circuit placed in the feeding path, wherein the impedance matching circuit matches the impedance between the RF generator and the plasma processing chamber;

    a chassis accommodating the impedance matching circuit, wherein the chassis functions as part of a return path from the susceptor electrode to the RF generator; and

    current-detecting means for detecting an RF current which returns from the susceptor electrode to the RF generator, the current-detecting means being provided in the chassis.

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