Gas distribution showerhead

• US 6,793,733 B2
• Filed: 01/25/2002
• Issued: 09/21/2004
• Est. Priority Date: 01/25/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Janakiraman, Karthik, Ingle, Nitin, Yuan, Zheng, Gianoulakis, Steven
• Primary Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US10/057,280
• Publication Number:
  US 20030140851A1
• Time in Patent Office: 970 Days
• Field of Search: 118/715, 156/345.33, 156/345.34
• US Class Current: 118/715
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.

Claims

1. An apparatus for forming a material on a semiconductor wafer, the apparatus comprising:

a processing chamber defined by walls;

a wafer support positioned within the processing chamber and configured to receive a semiconductor wafer;

a processing gas supply; and

a gas distribution showerhead overlying the wafer support and including a tapered face plate proximate to the wafer support, an edge of the tapered face plate exhibiting a reduced thickness relative to a thickness of a center of the face plate to create a taper angle, such that material deposited on a wafer in contact with the wafer support exhibits a uniform center-to-edge thickness, the tapered faceplate further comprising,

an inlet portion configured to receive a flow of a processing gas, the inlet portion comprising an aperture having a width, and

an outlet portion configured to convey the processing gas flow to a semiconductor wafer, the outlet portion comprising an elongated slot in fluid communication with the aperture.

2. The apparatus of claim 1 wherein the taper angle is between about 0.5°

and 50°

.

3. The apparatus of claim 1, wherein the elongated slot has a length at least one-half a thickness of the face plate.

4. The apparatus of claim 1, wherein the elongated slot is circular and continuous.

5. The apparatus of claim 1 wherein a width of the elongated slot is greater than the width of the aperture.

6. The apparatus of claim 5 wherein the width of the elongated slot is at least 2.25×

larger than the width of the aperture.

7. An apparatus for forming a material on a semiconductor wafer, the apparatus comprising:

a processing chamber defined by walls;

a wafer support positioned within the processing chamber and configured to receive a semiconductor wafer;

a processing gas supply; and

a gas distribution showerhead overlying the wafer support and including a tapered face plate proximate to the wafer support, the tapered face plate comprising,

an inlet portion configured to receive a flow of a processing gas, the inlet portion comprising an aperture having a width, and

an outlet portion configured to convey the processing gas flow to a semiconductor wafer, the outlet portion comprising an elongated slot in fluid communication with the aperture,

wherein an edge of the tapered face plate exhibits a reduced thickness relative to a thickness of a center of the face plate to create a taper angle, such that material deposited on a wafer in contact with the wafer support exhibits a uniform center-to-edge thickness.

8. The apparatus of claim 7 the taper angle is between about 0.5°

and 5°

.