Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge

• US 6,794,271 B2
• Filed: 09/28/2001
• Issued: 09/21/2004
• Est. Priority Date: 09/28/2001
• Status: Expired due to Fees

• Current Assignee: Rockwell Automation Technologies Incorporated (Allen-Bradley Co., Inc.)
• Original Assignee: Rockwell Automation Technologies Incorporated (Allen-Bradley Co., Inc.)
• Inventors: Kretschmann, Robert J., Harris, Richard D.
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US09/967,157
• Publication Number:
  US 20030062332A1
• Time in Patent Office: 1,089 Days
• Field of Search: 438/455, 438/456, 438/52, 438/406, 438/379, 216/17
• US Class Current: 438/456
• CPC Class Codes: B81C 1/00357 involving bonding one or several substrates on a non-temporary support, e.g. another substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate

Abstract

A method for fabricating MEMS structures includes etching a recess in either an upper surface of a substrate that is bonded to a wafer that ultimately forms the MEMS structure, or to the lower surface of the wafer that is bonded to the substrate. Accordingly, once the etching processes of the wafer are completed, the recess facilitates the release of an internal movable structure within the fabricated MEMS structure without the use of a separate sacrificial material. Furthermore, a bridge, which is preferably insulating, is pre-etched before the wafer is attached to the substrate.

Claims

1. A method of fabricating a MEMS structure, comprising the steps of:

(a) providing a wafer having at least a first insulating member and a second member;

(b) removing a portion of the first member through to the second member to form a bridge from the first member and a pair of spacers defining a recess therebetween;

(c) attaching the spacers to a substrate to form a composite structure having an internal void formed therein, wherein the bridge is aligned with the internal void, and wherein the substrate provides at least one wall that at least partially defines the internal void; and

(d) etching through the second member around the periphery of the bridge to break through into the recess and release the second member from mechanical communication with the substrate.

2. The method as recited in claim 1, further comprising etching an alignment hole through the first, and second members and substantially through the wafer.

3. The method as recited in claim 2, further comprising thinning the wafer such that the alignment hole extends entirely through the wafer.

4. The method as recited in claim 1, wherein the first member comprises a first layer and a second layer of selectively etchable materials, wherein the first layer is etched to form the spacers, and wherein the second layer is etched to form the bridge.

5. The method as recited in claim 4, wherein the second layer comprises silicon dioxide.

6. The method as recited in claim 4, wherein the first layer is selected from the group consisting of silicon nitride and polycrystalline silicon.

7. The method as recited in claim 1, wherein step (d) further comprises forming a stationary conductive member extending from the substrate that is separated from the bridge via a variable size gap.

8. The method as recited in claim 1, wherein the second member comprises silicon.

9. The method as recited in claim 1, further comprising depositing and patterning a conductive layer onto the first layer.

10. The method as recited in claim 9, wherein the conductive layer comprises aluminum.

11. The method as recited in claim 1, wherein the substrate is selected from the group consisting of glass, high resistivity silicon, crystalline sapphire, crystalline silicon, polycrystalline silicon, silicon carbide, or ceramic.

12. A method of fabricating a MEMS structure, comprising the steps of:

(a) providing a wafer having at least a first member and a second member,

(b) removing a portion of the first member to form a bridge and a pair of spacers defining a recess therebetween;

(c) attaching the spacers to a substrate to form a composite structure having an internal void formed therein, wherein the bridge is aligned with the internal void; and

(d) etching through the second member around the periphery of the bridge to break through into the recess and release the bridge from mechanical communication with the substrate, wherein the etching step forms a conductive member extending from the bridge and separated from a stationary member via a gap that varies in size in response to bridge movement.

13. The method as recited in claim 12, further comprising etching an alignment hole through the first, and second layer and substantially through the wafer.

14. The method as recited in claim 13, further comprising thinning the wafer such that the alignment hole extends entirely through the wafer.

15. The method as recited in claim 12, wherein the first member comprises a first layer and a second layer of selectively etchable materials, wherein the first layer is etched to form the spacers, and wherein the second layer is etched to form the bridge.

16. The method as recited in claim 15, wherein the second layer is made of an insulating material.

17. The method as recited in claim 16, wherein the second layer comprises silicon dioxide.

18. The method as recited in claim 15, wherein the first layer is selected from the group consisting of silicon nitride and polycrystalline silicon.

19. The method as recited in claim 12, wherein step (d) further comprises forming the stationary member extending outwardly from the substrate.

20. The method as recited in claim 12, wherein the conductive member and stationary member are electrically isolated from one another.

21. The method as recited in claim 12, wherein the second member comprises silicon.

22. The method as recited in claim 12, further comprising depositing and patterning a conductive layer onto the first layer.

23. The method as recited in claim 22, wherein the conductive layer comprises aluminum.

24. The method as recited in claim 12, wherein the substrate is selected from the group consisting of glass, high resistivity silicon, crystalline sapphire, crystalline silicon, polycrystalline silicon, silicon carbide, or ceramic.