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Process for growing metal or metal carbide thin films utilizing boron-containing reducing agents

  • US 6,794,287 B2
  • Filed: 03/20/2003
  • Issued: 09/21/2004
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Term
First Claim
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1. A process for growing a metal or metal carbide thin film on a substrate by a chemical vapor deposition type process, comprising:

  • vaporizing a transition metal source material and a reducing agent capable of reducing the transition metal source material to a reduced state;

    feeding the transition metal source material and the reducing agent into a reaction space; and

    contacting the transition metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound containing at least one boron-carbon bond and wherein said boron compound is capable of forming gaseous reaction by-products when reacted with the transition metal source material.

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