Method and apparatus for treating low k dielectric layers to reduce diffusion
First Claim
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1. A method for processing a substrate, comprising:
- depositing a low dielectric constant layer on the substrate in a processing chamber by a plasma enhanced chemical vapor deposition process; and
treating the low dielectric constant layer with an in situ passivating process comprising;
introducing a nitrating gas selected from the group consisting of ammonia, nitrogen, nitrous oxide, and combinations thereof, into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
exposing the low dielectric constant layer to the plasma of the processing gas.
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Abstract
Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.
368 Citations
29 Claims
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1. A method for processing a substrate, comprising:
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depositing a low dielectric constant layer on the substrate in a processing chamber by a plasma enhanced chemical vapor deposition process; and
treating the low dielectric constant layer with an in situ passivating process comprising;
introducing a nitrating gas selected from the group consisting of ammonia, nitrogen, nitrous oxide, and combinations thereof, into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
exposing the low dielectric constant layer to the plasma of the processing gas. - View Dependent Claims (2, 3, 4, 5, 24, 25, 26, 27)
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6. A method for processing a substrate, comprising:
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depositing a silicon carbide layer on the substrate in a processing chamber;
introducing a processing gas comprising a nitrating gas into the processing chamber;
generating a plasma of the processing gas in the processing chamber; and
modifying a surface of the silicon carbide layer by exposing the silicon carbide layer to the plasma of the processing gas to form a passivating surface on the silicon carbide layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 29)
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17. A method for forming a low dielectric constant barrier layer on a substrate, comprising:
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depositing a silicon carbide layer on the substrate; and
depositing a passivating layer comprising silicon and nitrogen on the silicon carbide layer by a process comprising;
introducing a silicon containing gas and a nitrogen containing gas into a process chamber containing the substrate;
initiating a plasma in the process chamber; and
reacting the silicon containing gas and the nitrogen containing gas in the presence of the plasma to deposit the passivating layer comprising silicon and nitrogen. - View Dependent Claims (18, 19, 20, 21, 22, 23, 28)
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Specification