Heterojunction P-I-N diode and method of making the same
First Claim
1. A semiconductor P-I-N heterojunction switching device for switching between a first conduction mode for enabling transfer of a non-optical signal applied at a first terminal of said switching device to a second terminal of said device in response to application of a DC bias signal, and a second isolation mode wherein substantially no output signal is generated at said second terminal, comprising:
- a first layer of aluminum gallium arsenide (AlGaAs) semiconductor material of a first doping type and coupled to said first terminal;
a second layer of gallium arsenide (GaAs) semiconductor material of a second doping type and coupled to said second terminal; and
an intrinsic layer of semiconductor material of gallium arsenide (GaAs) coupled between the first and second layers, the first layer having an energy bandgap greater than an energy bandgap of the intrinsic layer of semiconductor material, and wherein in response to said non-optical signal applied at said first terminal and said DC bias signal applied to said device, said switching device operates in said first conduction mode to cause forward injection of carriers from the first layer to the intrinsic layer while retarding back injection of oppositely charged carriers from the intrinsic layer to the first layer, to generate said output signal at said second terminal.
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Accused Products
Abstract
A heterojunction P-I-N diode switch comprises a first layer of doped semiconductor material of a first doping type, a second layer of doped semiconductor material of a second doping type and a substrate on which is disposed the first and second layers. An intrinsic layer of semiconductor material is disposed between the first layer and second layer. The semiconductor material composition of at least one of the first layer and second layer is sufficiently different from that of the intrinsic layer so as to form a heterojunction therebetween, creating an energy barrier in which injected carriers from the junction are confined by the barrier, effectively reducing the series resistance within the I region of the P-I-N diode and the insertion loss relative to that of homojunction P-I-N diodes.
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Citations
16 Claims
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1. A semiconductor P-I-N heterojunction switching device for switching between a first conduction mode for enabling transfer of a non-optical signal applied at a first terminal of said switching device to a second terminal of said device in response to application of a DC bias signal, and a second isolation mode wherein substantially no output signal is generated at said second terminal, comprising:
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a first layer of aluminum gallium arsenide (AlGaAs) semiconductor material of a first doping type and coupled to said first terminal;
a second layer of gallium arsenide (GaAs) semiconductor material of a second doping type and coupled to said second terminal; and
an intrinsic layer of semiconductor material of gallium arsenide (GaAs) coupled between the first and second layers, the first layer having an energy bandgap greater than an energy bandgap of the intrinsic layer of semiconductor material, and wherein in response to said non-optical signal applied at said first terminal and said DC bias signal applied to said device, said switching device operates in said first conduction mode to cause forward injection of carriers from the first layer to the intrinsic layer while retarding back injection of oppositely charged carriers from the intrinsic layer to the first layer, to generate said output signal at said second terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15, 16)
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10. A non-optical switch comprising:
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a substrate on which is disposed one or more input contacts for providing a non-optical input signal and one or more output contacts for providing an output signal;
a plurality of transmission lines, at least one of which is coupled to a corresponding one of said one or more input contacts and at least another of which is coupled to a corresponding one of said one or more output contacts; and
one or more P-I-N heterojunction diodes having;
a first layer of doped semiconductor material of a first doping type and having a first electrode;
a second layer of doped semiconductor material of a second doping type and having a second electrode;
a substrate on which is disposed the first and second layers; and
an intrinsic layer of semiconductor material disposed between the first layer and second layer, the semiconductor material composition of the intrinsic layer being different from that of at least the first layer so as to form a heterojunction therebetween;
wherein said one or more semiconductor P-I-N heterojunction diodes are coupled to said transmission lines in at least one of
1) a series configuration,
2) a shunt configuration, and
3) a series-shunt configuration, to switch a conduction path between corresponding ones of said input contacts and output contacts in accordance with DC bias conditions applied to said P-I-N heterojunction diodes to enable said non-optical input signal applied at one of said contacts to be conducted to one of said output contacts according to said DC bias conditions.- View Dependent Claims (11, 12, 13, 14)
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Specification