Heterojunction P-I-N diode and method of making the same

• US 6,794,734 B2
• Filed: 05/03/2002
• Issued: 09/21/2004
• Est. Priority Date: 05/03/2002
• Status: Expired due to Term

• Current Assignee: MACOM Technology Solutions Holdings, Inc.
• Original Assignee: Mia-Com
• Inventors: Brogle, James Joseph, Boles, Timothy Edward, Hoag, David Russell
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US10/139,067
• Publication Number:
  US 20030205715A1
• Time in Patent Office: 872 Days
• Field of Search: 257/656, 257/94, 257/183
• US Class Current: 257/656
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/868 PIN diodes
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A heterojunction P-I-N diode switch comprises a first layer of doped semiconductor material of a first doping type, a second layer of doped semiconductor material of a second doping type and a substrate on which is disposed the first and second layers. An intrinsic layer of semiconductor material is disposed between the first layer and second layer. The semiconductor material composition of at least one of the first layer and second layer is sufficiently different from that of the intrinsic layer so as to form a heterojunction therebetween, creating an energy barrier in which injected carriers from the junction are confined by the barrier, effectively reducing the series resistance within the I region of the P-I-N diode and the insertion loss relative to that of homojunction P-I-N diodes.

Claims

1. A semiconductor P-I-N heterojunction switching device for switching between a first conduction mode for enabling transfer of a non-optical signal applied at a first terminal of said switching device to a second terminal of said device in response to application of a DC bias signal, and a second isolation mode wherein substantially no output signal is generated at said second terminal, comprising:

a first layer of aluminum gallium arsenide (AlGaAs) semiconductor material of a first doping type and coupled to said first terminal;

a second layer of gallium arsenide (GaAs) semiconductor material of a second doping type and coupled to said second terminal; and

an intrinsic layer of semiconductor material of gallium arsenide (GaAs) coupled between the first and second layers, the first layer having an energy bandgap greater than an energy bandgap of the intrinsic layer of semiconductor material, and wherein in response to said non-optical signal applied at said first terminal and said DC bias signal applied to said device, said switching device operates in said first conduction mode to cause forward injection of carriers from the first layer to the intrinsic layer while retarding back injection of oppositely charged carriers from the intrinsic layer to the first layer, to generate said output signal at said second terminal.

2. The device of claim 1, wherein the first layer, the second layer and the intrinsic layer are grown on a semiconductor substrate.

3. The device of claim 1, wherein the GaAs second layer semiconductor material is n-type, the AlGaAs first layer is p-type, and wherein the GaAs second layer is grown on a GaAs semiconductor substrate and the intrinsic layer is grown on the GaAs second layer.

4. The device of claim 3, wherein the composition of aluminum in the first layer is at least 5 percent of the total number of aluminum plus gallium atoms.

5. The device of claim 1, wherein the GaAs second layer semiconductor material is p-type, the AlGaAs first layer is n-type, and wherein the AlGaAs first layer is grown on a GaAs semiconductor substrate and the intrinsic layer is grown on the AlGaAs first layer.

6. The device of claim 5, wherein the composition of aluminum in the first layer is at least 5 percent of the total number of aluminum plus gallium atoms.

7. The device of claim 1, wherein the second layer of semiconductor material is AlGaAs forming a double heterojunction.

8. The device of claim 7, wherein the AlGaAs second layer semiconductor material is n-type, the AlGaAS first layer is p-type, and wherein the AlGaAs second layer is grown on a GaAs semiconductor substrate and the intrinsic layer is grown on the AlGaAs second layer.

9. The device of claim 8, wherein the composition of aluminum in each of the first and second layers is at least 5 percent of the total number of aluminum plus gallium atoms.

15. The switch according to claim 1, wherein said non-optical input signal is a radio frequency signal.

16. The switch according to claim 1, wherein said non-optical input signal is a microwave signal.

10. A non-optical switch comprising:

a substrate on which is disposed one or more input contacts for providing a non-optical input signal and one or more output contacts for providing an output signal;

a plurality of transmission lines, at least one of which is coupled to a corresponding one of said one or more input contacts and at least another of which is coupled to a corresponding one of said one or more output contacts; and

one or more P-I-N heterojunction diodes having;

a first layer of doped semiconductor material of a first doping type and having a first electrode;

a second layer of doped semiconductor material of a second doping type and having a second electrode;

a substrate on which is disposed the first and second layers; and

an intrinsic layer of semiconductor material disposed between the first layer and second layer, the semiconductor material composition of the intrinsic layer being different from that of at least the first layer so as to form a heterojunction therebetween;

wherein said one or more semiconductor P-I-N heterojunction diodes are coupled to said transmission lines in at least one of

     1) a series configuration,

     2) a shunt configuration, and

     3) a series-shunt configuration, to switch a conduction path between corresponding ones of said input contacts and output contacts in accordance with DC bias conditions applied to said P-I-N heterojunction diodes to enable said non-optical input signal applied at one of said contacts to be conducted to one of said output contacts according to said DC bias conditions.

11. The switch according to claim 10, wherein said non-optical input signal is a radio frequency signal.

12. The switch according to claim 10, wherein said non-optical input signal is a microwave signal.

13. The switch according to claim 10, wherein said one or more semiconductor P-I-N heterojunction diodes comprises:

a first set of heterojunction P-I-N diodes coupled to one another, wherein one of said first and second electrodes of one diode of said set is coupled to an input transmission line for receiving said input signal, and wherein one of said first and second electrodes of another diode of said set is coupled to an output transmission line for providing said input signal to a corresponding one of said output contacts according to a DC bias condition associated with said first set.

14. The switch according to claim 13, further comprising at least a second set of heterojunction P-I-N diodes coupled to one another, wherein one of said first and second electrodes of one diode of said second set is coupled to an input transmission line for receiving said input signal, and wherein one of said first and second electrodes of another diode of said second set is coupled to another output transmission line for providing said input signal to a corresponding another one of said output contacts according to a DC bias condition associated with said second set.