CMOS image sensor with noise cancellation

• US 6,795,117 B2
• Filed: 06/26/2002
• Issued: 09/21/2004
• Est. Priority Date: 11/06/2001
• Status: Expired due to Fees

• Current Assignee: Candela Microsystems Incorporated
• Original Assignee: Candela Microsystems Incorporated
• Inventors: Tay, Hiok Nam
• Primary Examiner(s): Garber, Wendy R.
• Assistant Examiner(s): WHIPKEY, JASON T
• Application Number:
  US10/183,218
• Publication Number:
  US 20030085402A1
• Time in Patent Office: 818 Days
• Field of Search: 348/241, 348/308, 250/208.1
• US Class Current: 348/241
• CPC Class Codes: G11C 11/407 for memory cells of the field-effect type
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 1/32358 using picture signal storage, e.g. at transmitter H04N1/17 takes precedence
• CPC Class Codes: H04N 1/32475 Changing the format of the data, e.g. parallel to serial or vice versa
• CPC Class Codes: H04N 1/32491 alternate storage in and retrieval from two parallel memories, e.g. using ping-pong buffers
• CPC Class Codes: H04N 1/40 Picture signal circuits H04N1/387 takes precedence
• CPC Class Codes: H04N 2201/0081 Image reader H04N2201/0091 - H04N2201/0094 take precedence
• CPC Class Codes: H04N 2201/3292 of one or two complete lines
• CPC Class Codes: H04N 25/616 involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
• CPC Class Codes: H04N 25/65 applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion
• CPC Class Codes: H04N 9/64 Circuits for processing colour signals H04N9/77 takes precedence; camera processing pipelines for processing colour signals H04N23/84
• CPC Class Codes: H04N 9/642 Multi-standard receivers

Abstract

An image sensor that has one or more pixels within a pixel array. The pixel array may be coupled to a control circuit and one or more subtraction circuits. The control circuit may cause each pixel to provide a first reference output signal and a reset output signal. The control circuit may then cause each pixel to provide a light response output signal and a second reference output signal. The light response output signal corresponds to the image that is to be captured by the sensor. The subtraction circuit may provide a difference between the reset output signal and the first reference output signal to create a noise signal that is stored in memory. The subtraction circuit may also provide a difference between the second reference output signal and the light response output signal to create a normalized light response output signal. The noise signal may then be subtracted from the normalized light response output signal to generate the output data of the sensor. The second reference output signal is the same as the first reference output signal so that the process in essence subtracts the reset noise from the light response signal.

Claims

1. An image sensor, comprising:

a pixel; and

,

a control circuit that is connected to said pixel and causes said pixel to provide in order a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference output signal.

2. The image sensor of claim 1, further comprising a first subtraction circuit that provides a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and provides a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal.

3. The image sensor of claim 2, further comprising a second subtraction circuit that subtracts said noise signal from said normalized light response signal.

4. The image sensor of claim 3, wherein said sampled first reference output signal has the same voltage as said sampled second reference output signal.

5. The image sensor of claim 2, wherein said first subtraction circuit includes a capacitor that stores at least one of said sampled output signals.

6. The image sensor of claim 2, further comprising a memory cell that is coupled to said first subtraction circuit and which stores said noise signal.

7. The image sensor of claim 6, wherein said memory cell stores a multi-level noise signal.

8. The image sensor of claim 7, further comprising an analog to digital converter coupled to said pixel and a digital to analog converter coupled to said analog to digital converter and said memory cell, said digital to analog converter provides a storage reference signal that is subtracted from said stored multi-level noise signal.

9. The image sensor of claim 1, wherein said pixel includes a photodetector coupled to a reset transistor that operates in a triode region during said first and second reference output signals.

10. The image sensor of claim 1, wherein said pixel includes a photodetector coupled to a reset transistor that is off when said reset output signal is sampled.

11. An image sensor, comprising:

a pixel; and

,

control means for causing said pixel to provide in order a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference output signal.

12. The image sensor of claim 11, further comprising first subtraction means for providing a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and providing a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal.

13. The image sensor of claim 12, further comprising second subtraction means for subtracting said noise signal from said normalized light response signal.

14. The image sensor of claim 13, wherein said sampled first reference output signal has the same voltage as said sampled second reference output signal.

15. The image sensor of claim 12, wherein said first subtraction means includes a capacitor that stores at least one of sampled output signals.

16. The image sensor of claim 12, further comprising memory means for storing said noise signal.

17. The image sensor of claim 16, wherein said memory means stores a multi-level noise signal.

18. The image sensor of claim 17, further comprising analog to digital means for converting said noise signal to a digital bit string and digital to analog means for converting said digital bit string to said multi-level noise signal, said digital to analog means provides a storage reference signal that is subtracted from said store multi-level noise signal.

19. The image sensor of claim 11, wherein said pixel includes a photodetector coupled to a reset transistor that operates in a triode region during said first and second reference output signals.

20. The image sensor of claim 11, wherein said pixel includes a photodetector coupled to a reset transistor that is off when said reset output signal is sampled.

21. A method for canceling noise in an image sensor, comprising:

sampling a first reference output signal from a pixel;

sampling a reset output signal from the pixel after sampling the first reference output signal;

generating a difference between the reset output signal and the first reference output signal to create a noise signal;

sampling a light response output signal from the pixel after sampling the reset output signal;

sampling a second reference output signal from the pixel after sampling the light response output signal;

generating a difference between the second reference output signal and the light response output signal to create a normalized light response signal; and

,

subtracting the noise signal from the normalized light response signal.

22. The method of claim 21, wherein a multi-level noise signal is stored in a memory cell.

23. The method of claim 21, wherein said first reference output signal has the same voltage as said second reference output signal.

24. An image sensor, comprising:

a pixel;

a control circuit that is connected to said pixel and causes said pixel to provide a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference signal, said sampled first reference output signal having the same voltage as said sampled second reference output signal;

a first subtraction circuit that provides a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and provides a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal; and

,

a second subtraction circuit that subtracts said noise signal from said normalized light response signal.

25. The image sensor of claim 24, wherein said pixel includes a photodetector coupled to a reset transistor that operates in a triode region during said first and second reference output signals.

26. The image sensor of claim 24, wherein said first subtraction circuit includes a capacitor that stores at least one of said sampled output signals.

27. The image sensor of claim 24, further comprising a memory cell that is coupled to said first subtraction circuit and which stores said noise signal.

28. The image sensor of claim 27, wherein said memory cell stores a multi-level noise signal.

29. The image sensor of claim 28, further comprising an analog to digital converter coupled to said pixel and a digital to analog converter coupled to said analog to digital converter and said memory cell, said digital to converter provides a storage reference signal that is subtracted from said stored multi-level noise signal.

30. The image sensor of claim 24, wherein said pixel includes a photodetector coupled to a reset transistor that is off when said reset output signal is sampled.

31. An image sensor, comprising:

a pixel;

control means for causing said pixel to provide a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference signal, said sampled first reference output signal having the same voltage as said sampled second reference output signal;

first subtraction means for providing a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and providing a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal; and

,

second subtraction means for subtracting said noise signal from said normalized light response signal.

32. The image sensor of claim 31, wherein said pixel includes a photodetector coupled to a reset transistor that has a sampling state in a triode region to obtain said first and second reference output signals.

33. The image sensor of claim 31, wherein said first subtraction means includes a capacitor that stores at least one of sampled output signals.

34. The image sensor of claim 31, further comprising memory means for storing said noise signal.

35. The image sensor of claim 34, wherein said memory means stores a multi-level noise signal.

36. The image sensor of claim 35, further comprising analog to digital means for converting said noise signal to a digital bit string and digital to analog means for converting said digital bit string to said multi-level noise signal, said digital to analog means provides a storage reference signal that is subtracted from said stored multi-level noise signal.

37. The image sensor of claim 31, wherein said pixel includes a photodetector coupled to a reset transistor that is off when said reset output signal is sampled.

38. A method for canceling noise in an image sensor, comprising:

sampling a first reference output signal from a pixel;

sampling a first output signal from the pixel;

generating a difference between the reset output signal and the first reference output signal to create a noise signal;

sampling a light response output signal from the pixel;

sampling a second reference output signal from the pixel, the first reference output signal having the same voltage as the second reference output signal;

generating a difference between the second reference output signal and the light response output signal to create a normalized light response signal; and

,

subtracting the noise signal from the normalized light response signal.

39. The method of claim 38, wherein a multi-level noise signal is stored in a memory cell.

40. An image sensor, comprising:

a pixel;

a control circuit that is connected to said pixel and causes said pixel to provide a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference signal; and

,

a first subtraction circuit that provides a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and provides a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal, said first subtraction circuit includes a capacitor that stores at least one of said sampled output signals.

41. The image sensor of claim 40, further comprising a second subtraction circuit that subtracts said noise signal from said normalized light response signal.

42. The image sensor of claim 40, wherein said pixel includes a photodetector coupled to a reset transistor that operates in a triode region during said first and second reference output signals.

43. The image sensor of claim 40, further comprising a memory cell that is coupled to said first subtraction circuit and which stores said noise signal.

44. The image sensor of claim 43, wherein said memory cell stores a multi-level noise signal.

45. The image sensor of claim 44, further comprising an analog to digital converter coupled to said pixel and a digital to analog converter coupled to said analog to digital converter and said memory cell, said digital to analog converter provides a storage reference signal that is subtracted from said stored multi-level noise signal.

46. An image sensor, comprising:

a pixel;

control means for causing said pixel to provide a sampled first reference output signal, a sampled reset output signal, a sampled light response output signal and a sampled second reference signal; and

,

first subtraction means for providing a difference between said sampled reset output signal and said sampled first reference output signal to create a noise signal, and providing a difference between said sampled second reference output signal and said sampled light response output signal to create a normalized light response signal, said first subtraction means includes a capacitor that stores at least one of said sampled output signals.

47. The image sensor of claim 46, further comprising second subtraction means for subtracting said noise signal from said normalized light response signal.

48. The image sensor of claim 46, wherein said pixel includes a photodetector coupled to a reset transistor that operates in a triode region during said first and second reference output signals.

49. The image sensor of claim 46, further comprising memory means for storing said noise signal.

50. The image sensor of claim 49, wherein said memory means stores a multi-level noise signal.

51. The image sensor of claim 50, further comprising analog to digital means for converting said noise signal to a digital bit string and digital to analog means for converting said digital bit string to said multi-level noise signal, said digital to analog means provides a storage reference signal that is subtracted from said stored multi-level noise signal.