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Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process

  • US 6,796,314 B1
  • Filed: 09/07/2001
  • Issued: 09/28/2004
  • Est. Priority Date: 09/07/2001
  • Status: Expired due to Fees
First Claim
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1. A method of cleaning byproducts from a semiconductor structure, said semiconductor structure comprising:

  • a first layer consisting essentially of borophosphosilicate glass (BPSG) formed on top of a second layer consisting essentially of silicon, and a contact hole formed by etching through said first layer to said second layer, said byproducts being formed by said etching and being located in said contact hole, said byproducts comprising silicon-containing residues and damaged silicon;

    said method comprising;

    providing a reaction chamber, said reaction chamber comprising a platen;

    placing said structure on said platen;

    creating a plasma, said plasma comprising a gas mixture, said gas mixture comprising hydrogen gas and a fluorine gas; and

    causing said plasma to contact said byproducts.

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