Surface-micromachined microfluidic devices
First Claim
1. A method for forming a fluid-flow channel on a substrate, comprising steps for:
- (a) depositing a first layer of silicon nitride on the substrate;
(b) depositing at least one layer of a sacrificial material over the first layer of silicon nitride, and patterning the sacrificial material to define a nonuniform shape for the channel, with the nonuniform shape including a constricted portion of the channel which has a height that is smaller than the height of the remainder of the channel;
(c) depositing a second layer of silicon nitride over the patterned sacrificial material, with the second layer of silicon nitride conforming to the nonuniform shape of the channel;
(d) forming a plurality of vertically-disposed electrical conductors spaced along the length of the constricted portion; and
(e) removing the sacrificial material from the channel.
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Accused Products
Abstract
Microfluidic devices are disclosed which can be manufactured using surface-micromachining. These devices utilize an electroosmotic force or an electromagnetic field to generate a flow of a fluid in a microchannel that is lined, at least in part, with silicon nitride. Additional electrodes can be provided within or about the microchannel for separating particular constituents in the fluid during the flow based on charge state or magnetic moment. The fluid can also be pressurized in the channel. The present invention has many different applications including electrokinetic pumping, chemical and biochemical analysis (e.g. based on electrophoresis or chromatography), conducting chemical reactions on a microscopic scale, and forming hydraulic actuators.
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Citations
6 Claims
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1. A method for forming a fluid-flow channel on a substrate, comprising steps for:
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(a) depositing a first layer of silicon nitride on the substrate;
(b) depositing at least one layer of a sacrificial material over the first layer of silicon nitride, and patterning the sacrificial material to define a nonuniform shape for the channel, with the nonuniform shape including a constricted portion of the channel which has a height that is smaller than the height of the remainder of the channel;
(c) depositing a second layer of silicon nitride over the patterned sacrificial material, with the second layer of silicon nitride conforming to the nonuniform shape of the channel;
(d) forming a plurality of vertically-disposed electrical conductors spaced along the length of the constricted portion; and
(e) removing the sacrificial material from the channel. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification