Semiconductor device, method of manufacturing the device and method of mounting the device

• US 6,797,544 B2
• Filed: 10/16/2001
• Issued: 09/28/2004
• Est. Priority Date: 10/20/2000
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Maeda, Tadashi, Sakai, Tadahiko, Ozono, Mitsuru
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Anya, Igwe U.
• Application Number:
  US09/977,220
• Publication Number:
  US 20020048906A1
• Time in Patent Office: 1,078 Days
• Field of Search: 438/121, 438/720, 438/718, 438/123, 438/126, 438/106, 438/110, 438/127, 438/617, 438/612-616, 257/738, 257/692, 257/737, 257/784, 257/786, 257/780, 257/787
• US Class Current: 438/121
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2223/54406 comprising alphanumeric information
• CPC Class Codes: H01L 2223/54473 for use after dicing
• CPC Class Codes: H01L 2223/54486 Located on package parts, e.g. encapsulation, leads, package substrate
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/27 Manufacturing methods
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/3511 : Warping
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor device having a thinned semiconductor element that can be easily handled is manufactured with a method of manufacturing. The semiconductor device includes a semiconductor element and a bumper member bonded, as a reinforcing member, to a back surface opposite to an electrode-formed surface of the semiconductor element with an adhesive. The adhesive has a low elastic modulus and easily expands and contracts after bonding, and bonds the semiconductor element to the bumper member while allowing the semiconductor element to be deformed. Thus, the semiconductor device can be easily handled, and the semiconductor element can be deformed in response to the deformation of a substrate after being mounted. In addition, a thermal stress in a heat cycle can be alleviated effectively.

Claims

1. A semiconductor device comprising:

a semiconductor element including an electrode formed on an electrode-formed surface thereof;

a reinforcing member bonded to a back surface of said semiconductor element, said back surface being opposite to said electrode-formed surface; and

an adhesive bonding said semiconductor element and said reinforcing member while allowing said semiconductor element to be deformed,

wherein said reinforcing member has a flexural rigidity greater than a flexural rigidity of said semiconductor element.

2. The semiconductor device of claim 1, wherein said adhesive is made of resin having a low elastic modulus, and bonds said back surface of said semiconductor element entirely to said reinforcing member.

3. The semiconductor device of claim 1, wherein said adhesive bonds only a center of said back surface of said semiconductor element to said reinforcing member.

4. The semiconductor device of claim 1, wherein said reinforcing member is larger than said semiconductor element in outside shape.

5. The semiconductor device of claim 4, wherein said reinforcing member includes:

a recess portion to which said semiconductor element is bonded; and

a projection formed at a border of said recess portion.

6. The semiconductor device of claim 1, wherein said reinforcing member functions as a holding member in handling.

7. The semiconductor device of claim 1, wherein identification information is applied to an applied surface of said reinforcing member, said applied surface being opposite to a surface of said reinforcing member bonded to said semiconductor element.

8. The semiconductor device of claim 1, wherein said semiconductor element has a thickness not greater than 100 μ

m.

9. A method of manufacturing a semiconductor device, said method comprising:

shaving a back surface of a semiconductor wafer, the back surface being opposite to an electrode-formed surface of the semiconductor wafer including a plurality of semiconductor elements therein;

bonding a reinforcing plate to the shaved back surface of the semiconductor wafer with an adhesive; and

dividing the semiconductor wafer to which the reinforcing plate is bonded and the reinforcing plate into units of the semiconductor elements, the reinforcing plate being operable to be held by a mounting head when the semiconductor elements are being mounted to a substrate,

wherein said dividing of the semiconductor wafer and the reinforcing plate comprises dividing the reinforcing plate with a dicing width smaller than a dicing width of the semiconductor wafer.

10. The method of claim 9, further comprising forming a bump on the electrode-formed surface of the semiconductor wafer.

11. The method of claim 9, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer until the semiconductor wafer has a thickness of not greater than 100 μ

m.

12. A method of manufacturing a semiconductor device, said method comprising:

shaving a back surface of a semiconductor wafer, the back surface being opposite to an electrode-formed surface of the semiconductor wafer including a plurality of semiconductor elements therein;

bonding a reinforcing plate to the shaved back surface of the semiconductor wafer with an adhesive;

dividing the semiconductor wafer to which the reinforcing plate is bonded and the reinforcing plate into units of the semiconductor elements, the reinforcing plate being operable to be held by a mounting head when the semiconductor elements are being mounted to a substrate; and

attaching a sheet to the electrode-formed surface of the semiconductor wafer, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer while the sheet is attached to the electrode-formed surface of the semiconductor wafer.

13. The method of claim 12, further comprising forming a bump on the electrode-formed surface of the semiconductor wafer.

14. The method of claim 12, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer until the semiconductor wafer has a thickness of not greater than 100 μ

m.

15. A method of manufacturing a semiconductor device, said method comprising:

forming a diced groove along a border between a plurality of semiconductor elements from an electrode-formed surface of a semiconductor wafer which includes the semiconductor elements formed therein;

attaching a sheet to the electrode-formed surface of the semiconductor wafer having the diced groove;

dividing the semiconductor wafer into the semiconductor elements by shaving a back surface of the semiconductor wafer to thin the semiconductor wafer to a thickness until the shaved back surface reaches the diced groove, the back surface being opposite to the electrode-formed surface to which the sheet is attached;

bonding a reinforcing plate to the back surface of the semiconductor elements with an adhesive; and

dividing the reinforcing plate into units corresponding to the semiconductor elements after removing the sheet from the electrode-formed surface.

16. The method of claim 15, wherein said dividing of the reinforcing plate comprises dividing the reinforcing plate with a dicing width smaller than the diced groove of the semiconductor wafer.

17. The method of claim 15, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer until the semiconductor wafer has a thickness of not greater than 100 μ

m.

18. A method of manufacturing a semiconductor device, said method comprising:

shaving a back surface of a semiconductor wafer, the back surface being opposite to an electrode-formed surface of the semiconductor wafer which includes a plurality of semiconductor elements;

dividing the semiconductor wafer into the semiconductor elements;

bonding a reinforcing member to a back surface of each of the semiconductor elements with an adhesive, the reinforcing member being operable to be held by a mounting head when the semiconductor elements are being mounted to a substrate; and

attaching a sheet to the electrode-formed surface of the semiconductor wafer, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer to which the sheet is attached.

19. The method of claim 18, further comprising forming a bump on the electrode-formed surface of the semiconductor wafer.

20. The method of claim 18, wherein said shaving of the back surface of the semiconductor wafer comprises shaving the back surface of the semiconductor wafer until the semiconductor wafer has a thickness of not greater than 100 μ

m.

21. A method of mounting a semiconductor device which includes:

a semiconductor element having an electrode-formed surface;

a reinforcing member bonded to a back surface of the semiconductor element that allows the semiconductor element to be deformed, the back surface being opposite the electrode-formed surface; and

an adhesive bonding the semiconductor element to the reinforcing member,

wherein said reinforcing member has a flexural rigidity greater than a flexural rigidity of said semiconductor element,

said method comprising;

holding the reinforcing member; and

mounting the semiconductor device to a workpiece, the semiconductor device having the reinforcing member held.

22. The method of claim 21,

wherein the reinforcing member includes a recess portion to which the semiconductor element is bonded and a projection formed at a border of the recess portion, and

wherein said mounting of the semiconductor device comprises bonding the projection to the workpiece.

23. The method of claim 21, wherein the semiconductor element has a thickness of not greater than 100 μ

m.