Method to reduce charge interface traps and channel hot carrier degradation

• US 6,797,644 B2
• Filed: 07/16/2001
• Issued: 09/28/2004
• Est. Priority Date: 08/01/2000
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kirkpatrick, Brian K., Russell, Edmund G., Watt, Victor, Walden, Beth
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): Kilday, Lisa
• Application Number:
  US09/906,515
• Publication Number:
  US 20020132493A1
• Time in Patent Office: 1,170 Days
• Field of Search: 438/308, 438/585, 438/758, 438/762, 438/766, 438/770, 438/773, 438/774, 438/800
• US Class Current: 438/773
• CPC Class Codes: C23C 8/10 Oxidising
• CPC Class Codes: C23C 8/16 using oxygen-containing compounds, e.g. water, carbon dioxide
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 21/3003 Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

Abstract

Using deuterium oxygen during stream oxidation forms an oxidizing vapor. Since deuterium is chemically similar to hydrogen, the oxidation process takes place normally and the silicon-silicon oxide interface is concurrently saturated with deuterium. Saturating the interface with deuterium reduces the interface trap density thereby reducing channel hot carrier degradation.

Claims

1. A method of forming a silicon containing film, comprising:

flowing a first amount of oxygen;

flowing a second amount of deuterium to form an oxidizing vapor with said first amount of oxygen;

inserting a silicon substrate with an upper surface in said oxidizing vapor;

setting the pressure of said oxidizing vapor on said upper surface of said silicon substrate to between 8.1 atmosphere and 25 atmospheres; and

increasing the temperature of said silicon substrate in said oxidizing vapor to form a dielectric layer on said upper surface.

2. The method of claim 1 wherein said flowing of said first amount of oxygen comprises a flow rate of 6000 sccm to 14,000 sccm.

3. The method of claim 1 wherein said flowing of said second amount of deuterium comprises a flow rate of 3000 sccm to 7000 sccm.

4. The method of claim 1 wherein said increasing the temperature of said silicon substrate comprises increasing the temperature to between 650°

C. and 1025°

C.

5. The method of claim 1, further comprising flowing HCL in said oxidizing vapor.