Layers, coatings or films synthesized using precursor layer exerted pressure containment

• US 6,797,874 B2
• Filed: 07/17/2002
• Issued: 09/28/2004
• Est. Priority Date: 09/20/2001
• Status: Expired due to Fees

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy J.
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Simkovic, Viktor
• Application Number:
  US10/197,051
• Publication Number:
  US 20030052391A1
• Time in Patent Office: 804 Days
• Field of Search: 438/455, 438/459, 427/354, 427/365, 427/369, 156/285, 156/312, 503/201, 503/217
• US Class Current: 136/252
• CPC Class Codes: C23C 14/0005 Separation of the coating from the substrate
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: C23C 14/5886 Mechanical treatment involving removal of material C23C14/588
• CPC Class Codes: C23C 14/5893 Mixing of deposited material
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]

Abstract

Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

Claims

1. A photovoltaic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

2. An electrical power generation system comprising the photovoltaic device of claim 1.

18. The photovoltaic device of claim 1, wherein the collection layer is located between the composition layer and the second substrate.

3. An electronic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

19. The electronic device of claim 3, wherein the collection layer is located between the composition layer and the second substrate.

4. A photodiode made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

20. The photodiode of claim 4, wherein the collection layer is located between the composition layer and the second substrate.

5. A composition prepared by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming the composition and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the composition remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

6. A photovoltaic device comprising the composition of claim 5.

7. An electrical power generation system comprising the photovoltaic device of claim 6.

8. An electronic device comprising the composition of claim 5.

9. A photodiode comprising the composition of claim 5.

21. The composition of claim 5, wherein the collection layer is located between the composition and the second substrate.

10. A photovoltaic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

11. An electrical power generation system comprising the photovoltaic device of claim 10.

22. The photovoltaic device of claim 10, wherein the collection layer is located between the film and the second substrate.

12. An electronic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

23. The electronic device of claim 12, wherein the collection layer is located between the film and the second substrate.

13. A photodiode made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

24. The photodiode of claim 13, wherein the collection layer is located between the film and the second substrate.

14. A photovoltaic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

15. An electrical power generation system comprising the photovoltaic device of claim 14.

25. The photovoltaic device of claim 14, wherein the collection layer is located between the coating and the second substrate.

16. An electronic device made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the collection layer remains coupled to the second substrate.

17. A photodiode made by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating and a collection layer located closer to the second substrate than the first substrate; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the collection layer remains coupled to the second substrate.