Semiconductor device having MOSFET of trench structure and method for fabricating the same

• US 6,798,018 B2
• Filed: 06/13/2002
• Issued: 09/28/2004
• Est. Priority Date: 06/14/2001
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Kitaguro, Koichi, Takada, Hiroki, Takaishi, Masaru
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Lee, Eugene
• Application Number:
  US10/167,490
• Publication Number:
  US 20020190313A1
• Time in Patent Office: 838 Days
• Field of Search: 257/328-334, 257/621
• US Class Current: 257/334
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor device has a cell region where transistor cells of a trench structure are arranged in a matrix form, in which a recessed trench is formed in a semiconductor layer, a gate oxide film is formed inside the recessed trench, and a gate electrode formed of polysilicon is disposed inside the recessed trench. To have contact with a gate wiring formed of a metal film, a gate pad disposed continuously to the gate electrode is placed inside a recessed part formed in the same depth as the recessed trench. Consequently, many transistor cells of the trench structure are formed in a matrix form. Even in a semiconductor device where the gate wiring formed of a metal film is contacted with the gate electrode, a semiconductor device of a structure allowing gate voltage to be increased sufficiently can be obtained.

Claims

1. A semiconductor device comprising:

a semiconductor layer;

at least one recessed trench formed in the semiconductor layer so as to define transistor cells of a trench structure;

a gate oxide film extending along a bottom and side walls of the recessed trench;

a gate electrode disposed inside the recessed trench;

a gate pad disposed continuously to the gate electrode; and

a gate wiring comprised of a metal film, the gate wiring being in contact with the gate pad,

wherein the gate pad is disposed inside a recessed part formed in a same depth as the recessed trench and the gate wiring is in contact with the gate pad inside the recessed part.

2. The semiconductor device according to claim 1, wherein each of the transistor cells of the trench structure has a structure, in which a channel diffusion region having a conductivity type different from that of the semiconductor layer and a source region having a same conductivity type as that of the semiconductor layer are sequentially disposed vertically on a side of a surface of the semiconductor layer;

a source wiring comprised of a metal film is directly disposed over a surface of the source region; and

the metal of the source wiring is spiked into the source region and the channel diffusion region, whereby an alloy layer is formed and Ohmic contact can be obtained.

3. The semiconductor device according to claim 1, wherein a bi-directional protection diode is formed by alternately disposing a p-type layer and an n-type layer in a ring shape in plan over an insulating film on an outer peripheral side beyond the cell region, and metal films having contact in a ring shape with an inner most layer and an outermost layer of the p-type layer or n-type layer are disposed, respectively, in which each of the metal films having contact in the ring shape is formed continuously to any one of the source wiring and the gate wiring comprised of a metal film.

4. The semiconductor device according to claim 3, wherein the gate wiring is disposed having contact with an outermost layer of the protection diode, a gate connecting part is formed so that the gate wiring is partially stepped over the protection diode and connected to the gate pad around the cell region, and the gate connecting part and a source connecting part having contact with the innermost layer of the source wiring are alternately formed in plan.

5. The semiconductor device according to claim 3, wherein a diffusion region having a conductivity type different from that of the semiconductor layer is formed in an outermost periphery of the cell region, and the source wiring contacted with an innermost layer of the protection diode is also contacted with the diffusion region.

6. The semiconductor device according to claim 1, wherein a gate pad disposed inside or around an outer periphery of the cell region is intermittently separated, the recessed part is not formed in a portion not disposed with the gate pad, a diffusion region comprised of a conductivity type different from that of the semiconductor layer is formed over a surface of the semiconductor layer, and the diffusion region allows a depletion layer formed between the channel diffusion region formed in each of the transistor cells and the semiconductor layer to extend to an outer peripheral side of a semiconductor chip.

7. The semiconductor device according to claim 1, wherein a diffusion region comprised of a same conductivity type as that of a channel diffusion region of the transistor cells is formed under a gate pad disposed inside or around an outer periphery of the cell region, deeper than the channel diffusion region.

8. The semiconductor device according to claim 1, wherein said gate wiring is in contact with said gate pad through an insulating film having a contact hole, said insulating film covering a corner part between the recessed part and a surface of the semiconductor layer.