Electronic component and method of manufacture

• US 6,798,064 B1
• Filed: 07/12/2000
• Issued: 09/28/2004
• Est. Priority Date: 07/12/2000
• Status: Expired due to Term

• Current Assignee: North Star Innovations Inc. (Wi-LAN Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Henry, Haldane S., Hill, Darrell G., Rampley, Colby G.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Owens, Douglas W.
• Application Number:
  US09/614,794
• Time in Patent Office: 1,539 Days
• Field of Search: 257/750, 257/751, 257/752-760
• US Class Current: 257/750
• CPC Class Codes: H01L 23/4821 Bridge structure with air gap
• CPC Class Codes: H01L 23/5221 Crossover interconnections
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An electronic component includes a substrate (110) and an airbridge (890) located over the substrate. The airbridge has at least a first layer and a second layer over the first layer. The airbridge is electrically conductive where the first layer of the airbridge is less resistive than the second layer of the airbridge.

Claims

1. An electronic component comprising:

a substrate; and

an airbridge located over the substrate and having at least a first layer and a second layer, wherein a first portion of the second layer is over the first layer,

wherein;

a gap exists between a portion of the airbridge and the substrate; and

a thickness of the second layer is less than a combined thickness of the first layer and the gap;

the airbridge is electrically conductive; and

the first layer of the airbridge is less resistive than the second layer of the airbridge.

2. The electronic component of claim 1 wherein:

the second layer is a passivation layer.

3. The electronic component of claim 1 wherein:

the second layer is harder than the first layer.

4. The electronic component of claim 1 wherein:

the thickness of the second layer is less than fifty percent of the combined thickness of the first layer and the gap.

5. The electronic component of claim 1 wherein:

a second portion of the second layer is located underneath an edge of the first layer.

6. The electronic component of claim 1 wherein:

the second layer is absent underneath a center portion of a width of the airbridge.

7. The electronic component of claim 1 wherein:

a gap exists underneath a portion of the airbridge; and

the gap is unsealed underneath the portion of the airbridge.

8. The electronic component of claim 1 wherein:

the second layer of the airbridge has a compressive stress level of approximately 0 to 200 MegaPascals.

9. The electronic component of claim 1 wherein:

the bridge further comprises;

a third layer underneath the first layer; and

the third layer is more resistive than the first layer.

10. The electronic component of claim 9 wherein:

the second layer is more resistive than the third layer.

11. The electronic component of claim 1 wherein:

the second layer of the airbridge is electrically conductive.

12. The electronic component of claim 1 wherein:

the second layer of the airbridge is electrically insulative.

13. A semiconductor component comprising:

a semiconductor substrate;

a semiconductor device supported by the semiconductor substrate;

a first electrically insulative layer overlying the semiconductor substrate and the semiconductor device; and

an airbridge located over the semiconductor substrate, located over the first electrically insulative layer, and electrically coupled to the semiconductor device,

wherein;

a gap exists between a portion of the airbridge and the first electrically insulative layer;

the airbridge has a first electrically conductive layer;

the airbridge has a second electrically insulative layer overlying the first electrically conductive layer; and

the second electrically insulative layer is a passivation layer harder than the first electrically conductive layer; and

the airbridge further comprises;

an electrically conductive barrier layer located underneath the first electrically conductive layer and more resistive than the first electrically conductive layer.

14. The semiconductor component of claim 13 wherein:

a thickness of the second electrically insulative layer is less than fifty percent of a combined thickness of the electrically conductive barrier layer, the first electrically conductive layer, and the gap.

15. The semiconductor component of claim 13 wherein:

the second electrically insulative layer is devoid of sealing the gap underneath the portion of the airbridge.

16. A method of manufacturing an electronic component comprising:

providing a substrate;

forming an electrically insulative layer over the substrate;

forming a first layer over the first electrically insulative layer to form a first portion of an airbridge;

forming a first portion of a second layer over the first layer to form a second portion of the airbridge over the substrate;

forming a gap between the airbridge and the electrically insulative layer; and

designing the airbridges to have a design width,

wherein;

the airbridge is electrically conductive;

the first layer of the airbridge is less resistive than the second layer of the airbridge; and

forming the first layer further comprises;

forming the first layer to have a first layer width greater than the design width; and

forming the second layer further comprises;

forming a second portion of the second layer underneath edges of the first layer; and

keeping the second layer absent underneath a central portion of the first layer, the central portion of the first layer having the design width.