Radio frequency power amplifier module integrated with a power control hoop

• US 6,798,287 B2
• Filed: 01/31/2003
• Issued: 09/28/2004
• Est. Priority Date: 12/10/2002
• Status: Expired due to Fees

• Current Assignee: Delta Electronics Incorporated
• Original Assignee: Delta Electronics Incorporated
• Inventors: Wu, Janne-wha, Hu, Cheng-chi, Shih, Ying-chou
• Primary Examiner(s): Mottola, Steven J.
• Application Number:
  US10/356,410
• Publication Number:
  US 20040108895A1
• Time in Patent Office: 606 Days
• Field of Search: 330/65, 330/66, 330/67, 330/68, 330/129, 330/140, 330/289, 330/295, 330/302
• US Class Current: 330/129
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A radio frequency (RF) power amplifier module integrated with a power control loop is formed on a print circuit board and packaged within a mold. In order to minimize a whole size of the RF power amplifier module, capacitors with a smaller size are employed to substitute for prior art ceramic directional couplers. In addition to the capacitors, RF power amplifiers, matching circuits, power detectors, and a power control specific application integrated circuit are all integrated on the print circuit board without individual packages. Furthermore, the RF power amplifiers and the power detectors are formed on a common semiconductor substrate. Therefore, the RF power amplifier module has advantages of a small size and minimum parasitic impedance.

Claims

1. A radio frequency (RF) power amplifier module, which is formed on a print circuit board and packaged within a mold, comprising:

at least one RF power amplifier formed on a first semiconductor substrate for outputting a power signal;

at least one matching circuit connected to the at least one RF power amplifier for a purpose of output matching;

at least one capacitor connected to the at least one matching circuit for retrieving part of the power signal as a power representation signal;

at least one power detector formed on the first semiconductor substrate and connected to the at least one capacitor for interpreting the power representation signal as a voltage level signal; and

a power control application specific integrated circuit (ASIC) formed on a second semiconductor substrate for receiving a power control signal from outside and the voltage level signal, and outputting a power adjustment signal to the at least one RF power amplifier based on a result of comparison between the power control signal and the voltage level signal,

wherein the at least one RF power amplifier, the at least one power detector, and the power control ASIC are mounted on the print circuit board in a form of bare dies.

2. The RF power amplifier module according to claim 1, further comprising:

at least one attenuator connected between the at least one capacitor and the at least one power detector for adjusting the power representation signal.

3. The RF power amplifier module according to claim 1, wherein:

each of the at least one attenuator is formed by a microstrip line with high impedance.

4. The RF power amplifier module according to claim 1, wherein:

the first semiconductor substrate is made of GaAs.

5. The RF power amplifier module according to claim 1, wherein:

the second semiconductor substrate is made of Si.

6. The RF power amplifier module according to claim 1, wherein:

each of the at least power detector is formed by a Schottky diode.

7. The RF power amplifier module according to claim 1, further comprising:

a temperature compensation power detector connected between the power control ASIC and ground for inputting a reference signal to the power control ASIC, thereby performing temperature compensation.

8. The RF power amplifier module according to claim 7, wherein:

the temperature compensation power detector is formed by a Schottky diode.

9. The RF power amplifier module according to claim 7, wherein:

the temperature compensation power detector is formed on the first semiconductor substrate.