Sputtering target, process for its production and film forming method
First Claim
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1. A sputtering target which comprises SiC and metallic Si and which has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×
- 103 kg/m3 to 3.1×
103 kg/m3, wherein the sputtering target comprises at most 1 mass % of elements other than Si and C.
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Abstract
A sputtering target is provided that includes SiC and metallic Si and has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×103 kg/m3 to 3.1×103 kg/m3. The sputtering target is capable of forming at high speed a film that contains SiO2 as the main component and has a low refractive index. The sputtering target can be produced by a process in which a molded product of SiC is impregnated with molten Si.
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15 Claims
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1. A sputtering target which comprises SiC and metallic Si and which has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×
- 103 kg/m3 to 3.1×
103 kg/m3, wherein the sputtering target comprises at most 1 mass % of elements other than Si and C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- 103 kg/m3 to 3.1×
Specification