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Sputtering target, process for its production and film forming method

  • US 6,800,182 B2
  • Filed: 04/15/2002
  • Issued: 10/05/2004
  • Est. Priority Date: 10/13/1999
  • Status: Expired due to Term
First Claim
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1. A sputtering target which comprises SiC and metallic Si and which has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×

  • 103 kg/m3 to 3.1×

    103 kg/m3, wherein the sputtering target comprises at most 1 mass % of elements other than Si and C.

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