Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFET

• US 6,800,509 B1
• Filed: 06/24/2003
• Issued: 10/05/2004
• Est. Priority Date: 06/24/2003
• Status: Active Grant

• Current Assignee: Anpec Electronics Corporation
• Original Assignee: Anpec Electronics Corporation
• Inventors: Liaw, Chorng-Wei, Lin, Wei-Jye, Lin, Ming-Jang
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): POMPEY, RON EVERETT
• Application Number:
  US10/601,651
• Time in Patent Office: 469 Days
• Field of Search: 438/138, 438/270, 438/259, 438/268, 438/212, 438/272, 438/700, 257/331, 257/328
• US Class Current: 438/138
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A process for a trench power MOSFET comprises forming a trench on a semiconductor substrate and an oxide and nitride in the trench, etching the oxide and nitride to remain a part of them at the bottom of the trench, and subsequent procedure for the other structure of the trench power MOSFET. Due to the thick insulator formed at the bottom of the trench, the trench power MOSFET is improved by increased voltage endurance and reduced parasitic capacitance, and thereby the cell density is increased.

Claims

1. A process for forming a trench-gate power MOSFET, comprising the steps of:

forming a trench deep into a drift layer of a first conductivity type above a substrate of said first conductivity type;

forming a first oxide on a surface of said trench;

depositing a nitride on a surface of said first oxide;

forming a second oxide filled in said trench;

etching said second oxide for leaving a thick oxide at a bottom of said trench;

etching said nitride for remaining a part of said nitride at said bottom of said trench;

forming a gate oxide on a sidewall of said trench;

forming a gate conductor filled in said trench;

forming a well region of a second conductivity type opposite to said first conductivity type adjacent to said sidewall of said trench;

forming a source region of said first conductivity type on said well region;

forming an insulator for covering on said gate conductor and a surface of said source region; and

depositing a metal for electrically connecting said source region with said well region.

2. A process according to claim 1, further comprising etching said first oxide after said step of etching said nitride.

3. A process according to claim 1, further comprising forming a third oxide on said nitride and thick oxide before said step of forming a gate conductor.

4. A process according to claim 1, further comprising etching said first oxide before said step of forming a gate oxide.

5. A process according to claim 1, wherein said step of etching said second oxide for leaving a thick oxide on a bottom of said trench comprises the steps of:

etching said second oxide for removing said second oxide from said sidewall of said trench;

coating a photoresist on said second oxide remained at said bottom of said trench;

etching said second oxide not covered by said photoresist; and

removing said photoresist for remaining said thick oxide at said bottom of said trench.

6. A process for forming a trench lateral power MOSFET with a trench bottom drain contact, comprising the steps of:

forming a trench on a substrate of a first conductivity type;

doping a bottom of said trench for forming a drain region of a second conductivity type opposite to said first conductivity type;

forming a first oxide on a surface of said trench;

depositing a nitride on said first oxide;

filling a second oxide in said trench;

etching said second oxide for forming a thick oxide at a bottom of said trench;

etching said nitride for leaving a part of said nitride remained at said bottom of said trench;

forming a gate oxide;

forming a gate conductor;

etching said second oxide, nitride and first oxide for exposing a surface of said drain region;

forming a source region of said second conductivity type on a surface of said substrate outside said trench;

forming a drain contact region on said exposed surface of said drain region;

depositing an insulator for covering on said gate conductor;

forming a drain conductor electrically connected to said drain contact region; and

depositing a metal for forming electrodes.

7. A process according to claim 6, further comprising etching said drain region after said step of doping a bottom of said trench for forming a drain region for said trench more deeper into said substrate.

8. A process according to claim 6, further comprising etching said first oxide after said step of etching said nitride.

9. A process according t o claim 8, further comprising oxidation after said step of etching said first oxide.

10. A process according to claim 6, further comprising etching said first oxide before said step of forming a gate oxide.

11. A process according to claim 6, further comprising forming a contact region of said first conductivity type adjacent to said source region.

12. A process according to claim 6, wherein said step of etching said second oxide for forming a thick oxide at a bottom of said trench comprises the steps of:

etching said second oxide for removing said second oxide from said sidewall of said trench;

coating a photoresist on said second oxide remained at said bottom of said trench;

etching said second oxide not covered by said photoresist; and

removing said photoresist for remaining said thick oxide at said bottom of said trench.