Method for fabricating ruthenium thin layer
First Claim
Patent Images
1. A method for fabricating a ruthenium (Ru) thin layer comprising:
- loading a substrate into a reaction chamber for an atomic layer deposition;
injecting RuXn into the reaction chamber, wherein n is 2 or 3, and adsorbing the RuXn onto a surface of the substrate wherein X is a material selected from the group consisting of hydrogen (H), C1˜
C10 alkyl, C2˜
C10 alkenyl, C1 C8 alkoxy, C6˜
C12 aryl, diketonates, cyclopentadienyl, C1 C8 alkylcyclopentadienyl and derivatives thereof including one or more halogen groups; and
injecting a reaction gas reductive to the RuXn into the reaction chamber.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating a Ru thin layer by using an atomic layer deposition (ALD) technique is disclosed. The method comprises the steps of loading a substrate into a reaction chamber for an atomic layer deposition, adsorbing RuXn (wherein n is 2 or 3), which is a Ru precursor, onto the substrate and injecting a reductive reaction gas into the reaction chamber.
80 Citations
9 Claims
-
1. A method for fabricating a ruthenium (Ru) thin layer comprising:
-
loading a substrate into a reaction chamber for an atomic layer deposition;
injecting RuXn into the reaction chamber, wherein n is 2 or 3, and adsorbing the RuXn onto a surface of the substrate wherein X is a material selected from the group consisting of hydrogen (H), C1˜
C10 alkyl, C2˜
C10 alkenyl, C1 C8 alkoxy, C6˜
C12 aryl, diketonates, cyclopentadienyl, C1 C8 alkylcyclopentadienyl and derivatives thereof including one or more halogen groups; and
injecting a reaction gas reductive to the RuXn into the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for fabricating a ruthenium (Ru) thin layer comprising:
-
loading a substrate into a reaction chamber for an atomic layer deposition;
injecting RuXn into the reaction chamber wherein n is 2 or 3 and adsorbing the RuXn onto a surface of the substrate wherein X is a material selected from the group consisting of hydrogen (H), C1˜
C10 alkyl, C2˜
C10 alkenyl, C1 C8 alkoxy, C6˜
C12 aryl, diketonates, cyclopentadienyl, C1 C8 alkylcyclopentadienyl and derivatives thereof including one or more halogen groups; and
injecting a reaction gas reductive to the RuXn into the reaction chamber, wherein the reductive reaction gas is a gas selected from the group consisting of hydrazine (N2H4), ammonia (NH3), NH2R, NHR2, NR3, C1˜
C10 alkylhydrazine, C1˜
C10 dialkylhydrazine and mixtures thereof and R is a material selected from the group consisting of hydrogen, C1˜
C10 alkyl, C2˜
C8 alkenyl, C1˜
C8 alkoxy, C6˜
C12 aryl and derivatives thereof including one or more halogen groups before the RuXn is adsorbed onto the surface of the substrate.
-
Specification