Integrated electromechanical switch and tunable capacitor and method of making the same

• US 6,800,912 B2
• Filed: 05/17/2002
• Issued: 10/05/2004
• Est. Priority Date: 05/18/2001
• Status: Active Grant

• Current Assignee: Corporation for National Research Initiatives
• Original Assignee: Corporation for National Research Initiatives
• Inventors: Ozgur, Mehmet
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Lee, Eugene
• Application Number:
  US10/147,300
• Publication Number:
  US 20020171121A1
• Time in Patent Office: 872 Days
• Field of Search: 257/414, 257/415, 257/418-420
• US Class Current: 257/414
• CPC Class Codes: B81B 2201/014 having a cantilever fixed on one side connected to one or more dimples
• CPC Class Codes: B81B 2201/031 Thermal actuators
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 2061/006 Micromechanical thermal relay
• CPC Class Codes: H01H 61/00 Electrothermal relays thermal switches not operated by electrical input, thermal switches with anticipating electrical input H01H37/00; thermally-sensitive members H01H37/32

Abstract

A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

Claims

1. An electromechanical device comprising:

a substrate having a first cavity formed therein;

a movable beam attached to the substrate, the movable beam being formed from a conductive layer and at least one dielectric layer; and

a fixed beam positioned above and separated from the movable beam by a second cavity formed under the fixed beam, the fixed beam being formed from a conductive layer and a dielectric mechanical support layer,

the movable beam being activated by an applied current or voltage to control its contact with the fixed beam, the movable beam having a share that does not completely close the opening between the first and second cavities.

2. The electromechanical device recited in claim 1, wherein the movable beam further comprises a polysilicon heater for heating and thereby actuating the movable beam.

3. The electromechanical device recited in claim 2, wherein the polysilicon layer is enclosed within the movable beam and contact between the movable beam and the fixed beam is made or broken by generating heat in the polysilicon layer, whereby the electromechanical device functions as a switch.

4. The electromechanical device recited in claim 2, wherein the polysilicon layer is enclosed within the movable beam, and wherein the movable beam is actuated without contacting the fixed beam by generating heat in the polysilicon layer, thereby causing the electromechanical device to function as a tunable capacitor.

5. The electromechanical device recited in claim 1, wherein an air cavity comprising the second cavity separates the movable beam from the fixed beam when the movable beam is not actuated.

6. The electromechanical device recited in claim 1 further comprising an integrated circuit formed on the substrate, the integrated circuit sensing and controlling the movable beam'"'"'s positioning by controlling the current flowing through the movable beam.

7. The electromechanical device recited in claim 1, wherein the movable beam is formed by a standard integrated process flow from at least one conductive layer and a plurality of dielectric layers.

8. The electromechanical device recited in claim 1, wherein the fixed beam is formed from at least one conductive layer, a plurality of dielectric layers, and at least one mechanical support layer.

9. The electromechanical device recited in claim 1, wherein the movable beam is formed from a plurality of conductive layers selected from the group comprising polysilicon, aluminum and copper, and from a plurality of dielectric layers selected from the group comprising doped or undoped silicon dioxide, a form of silicon nitride, or a low-k dielectric.

10. The electromechanical device recited in claim 9, wherein the low-k dielectric is selected from the group comprising SiLK, Black Diamond, Nanoglass E, and Zirkon LK.

11. The electromechanical device recited in claim 1, wherein the fixed beam is formed from a plurality of conductive layers selected from the group comprising gold, copper, silver, platinum, titanium, tungsten, aluminum, nickel, and alloys thereof.

12. The electromechanical device recited in claim 1, wherein the movable beam has a conductive film located at a contact area of the movable beam, thereby allowing metal-to-metal contact between the movable beam and the fixed beam.

13. The electromechanical device recited in claim 1, wherein the movable beam has a dielectric film located at a contact area of the movable beam, thereby allowing metal-to-dielectric contact between the movable beam and the fixed beam.

14. The electromechanical device recited in claim 1 further comprising a signal path connected to the movable beam and a ground plane of a planar waveguide connected to the fixed beam, whereby actuation of the movable beam so as to contact the fixed beam causes the signal path to be connected to the ground plane.

15. The electromechanical device recited in claim 1 further comprising an electrical potential applied between the conductive layer of the movable beam and the conductive layer of the fixed beam, whereby the movable beam is actuated electrostatically by the application of the electrical potential to contact the fixed beam and thereby function as a switch.

16. The electromechanical device recited in claim 1 further comprising an electrical potential applied between the conductive layer of the movable beam and the conductive layer of the fixed beam, whereby the movable beam is actuated electrostatically by the application of the electrical potential to not contact the fixed beam and thereby function as a tunable capacitor.

17. The electromechanical device recited in claim 1, wherein the substrate is silicon.

18. The electromechanical device recited in claim 1, wherein the movable beam is connected to the substrate at one point.

19. The electromechanical device recited in claim 1, wherein the mechanical support layer is selected from the group comprising a screen-printed polyimide, a photoimageable polymer, and a dry-etchable polymer.

20. The electromechanical device recited in claim 1, wherein the movable beam is attached to the substrate at a plurality of points.

21. A electromechanical device comprising:

a semiconductor substrate;

a movable beam formed on the substrate by a standard integrated process flow from at least one conductive layer and plurality of dielectric layers;

the movable beam being attached to the substrate at one or more points, the semiconductor substrate being selectively etched underneath the movable beam;

a fixed beam formed directly above the movable beam and separated from the movable beam by an air cavity, the fixed beam being formed from at least one conductive layer, plurality of dielectric layers and at least one mechanical support layer; and

an integrated circuit also formed on the substrate, the integrated circuit sensing and controlling the position of the movable beam by controlling the voltage or current flowing to the movable beam.

22. The electromechanical device recited in claim 21, wherein the movable beam further comprises a polysilicon heater for heating and thereby actuating the movable beam.

23. The electromechanical device recited in claim 22 wherein the polysilicon layer is enclosed within the movable beam and contact between the movable beam and the fixed beam is made or broken by generating heat in the polysilicon layer, whereby the electromechanical device functions as a switch.

24. The electromechanical device recited in claim 22, wherein the polysilicon layer is enclosed within the movable beam and the movable beam is actuated without contacting the fixed beam by generating heat in the polysilicon layer, whereby the electromechanical device functions as a tunable capacitor.

25. The electromechanical device recited in claim 21 further comprising an electrical potential applied between the conductive layer of the movable beam and the conductive layer of the fixed beam, whereby the movable beam is actuated electrostatically by the application of the electrical potential to contact the fixed beam and thereby function as a switch.

26. The electromechanical device recited in claim 21 further comprising an electrical potential applied between the conductive layer of the movable beam and the conductive layer of the fixed beam, whereby the movable beam is actuated electrostatically by the application of the electrical potential to not contact the fixed beam and thereby function as a tunable capacitor.