Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
First Claim
1. A semiconductor substrate comprising:
- at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line on the active surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom; and
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the back surface remote therefrom.
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0 Petitions
Accused Products
Abstract
An apparatus and method of rerouting redistribution lines from an active surface of a semiconductor substrate to a back surface thereof and assembling and packaging individual and multiple semiconductor dice with such rerouted redistribution lines formed thereon. The semiconductor substrate includes one or more vias having conductive material formed therein and witch extend from an active surface to a back surface of the semiconductor substrate. The redistrobution patterns are patterned on the back surface of the semiconductor substrate, extending from the conductive material in the vias to predetermined locations on the back surface of the semiconductor substrate that correspond with an interconnect pattern of another substrate for interconnection thereto.
624 Citations
68 Claims
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1. A semiconductor substrate comprising:
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at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line on the active surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom; and
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the back surface remote therefrom. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device assembly comprising:
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at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line formed over the active surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the back surface remote therefrom; and
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the substrate being superimposed over the at least one semiconductor die with the at least one electrical interconnect on the first surface electrically connected to the at least one electrically conductive redistribution line at the predetermined location on the back surface of the at least one semiconductor die. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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47. A stacked semiconductor device assembly comprising:
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a first semiconductor die having an active surface and a back surface, the first semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line on the active surface of the first semiconductor die in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
at least one electrically conductive redistribution line on the back surface of the first semiconductor die in electrical communication with the electrically conductive material of the at least one via or another via and extending to a predetermined location on the back surface remote therefrom;
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface directly electrically connected to the first semiconductor die; and
a second semiconductor die having an active surface and a back surface, the second semiconductor die electrically connected to the first semiconductor die by way of the at least one electrically conductive redistribution line on the active surface thereof or the at least one electrically conductive redistribution line on the back surface thereof;
at least one via extending from the active surface to the back surface of the second semiconductor die;
a conductive material disposed in the at least one via of the second semiconductor die and substantially extending a length thereof from the active surface to the back surface thereof; and
at least one electrically conductive redistribution line on the back surface of the second semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location remote therefrom. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
at least one via extending from the active surface to the back surface thereof;
a conductive material disposed in the at least one via of the third semiconductor die and substantially extending a length thereof from the active surface to the back surface thereof; and
at least one electrically conductive redistribution line in electrical communication with the conductive material in the at least one via of the third semiconductor die and extending to a predetermined location on the back surface thereof.
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55. The stacked assembly of claim 54, wherein the at least one electrically conductive redistribution line on the back surface of the third semiconductor die is electrically connected to the active surface of the second semiconductor die at the predetermined location of the at least one electrically conductive redistribution line of the third semiconductor die with an electrically conductive bump extending transversely therebetween.
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56. The stacked assembly of claim 55, wherein the active surface of the third semiconductor die includes at least one wire bond extending therefrom to the first surface of the substrate.
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57. The stacked assembly of claim 56, further comprising an encapsulation material formed at least over the at least one wire bond.
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58. The stacked assembly of claim 53, wherein the active surface of the third semiconductor die is electrically connected to the active surface of the second semiconductor die with electrically conductive bumps extending transversely therebetween.
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59. The stacked assembly of claim 47, wherein the back surface of the first semiconductor die comprises at least one electrical component formed thereon.
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60. The stacked assembly of claim 59, wherein the at least one electrical component comprises at least one of a capacitor, an inductor, a resistor, a fuse and a controller.
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61. The stacked assembly of claim 59, wherein the at least one electrical component is electrically connected to the at least one electrically conductive redistribution line on the back surface of the first embodiment die.
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62. The stacked assembly of claim 61, wherein the at least one electrical component is formed as part of the at least one electrically conductive redistribution line on the back surface of the first embodiment die.
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63. An electronic system comprising:
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a processor device coupled to an input device and an output device; and
a semiconductor device assembly coupled to at least one of the processor device, the input device and the output device, the semiconductor device assembly comprising;
at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface of the at least one semiconductor die;
at least one electrically conductive redistribution line on the active surface of the at least one semiconductor die in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
at least one electrically conductive redistribution line on the back surface of the at least one semiconductor die in electrical communication with the conductive material in the at least one via and extending to a predetermined location on the back surface remote therefrom; and
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface electrically connected to the at least one electrically conductive redistribution line at the predetermined location on the back surface of the at least one semiconductor die. - View Dependent Claims (64, 65, 66, 67)
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68. A semiconductor substrate comprising:
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at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via or another via and extending to a predetermined location on the back surface remote therefrom;
at least one bond pad formed over the at least one via on the active surface; and
a wire bond pad formed from the at least one bond pad.
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Specification