Ring oscillator with embedded scatterometry grate array

• US 6,801,096 B1
• Filed: 01/22/2003
• Issued: 10/05/2004
• Est. Priority Date: 01/22/2003
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Buller, James F., Wristers, Derick J., Nariman, Hormuzdiar E.
• Primary Examiner(s): KINKEAD, ARNOLD M
• Application Number:
  US10/348,014
• Time in Patent Office: 622 Days
• Field of Search: 331/57, 438/8, 438/15, 356/341, 356/237.4
• US Class Current: 331/57
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H03K 3/0315 Ring oscillators

Abstract

A MOS ring oscillator includes a number of serially connected inverter stages with each stage comprising a MOS transistor pair. At least one of the transistors also comprises a scatterometry grate array, which is used during manufacturing of the ring oscillator to obtain scatterometry measurements that allow polysilicon lines of the MOS ring oscillator to have widths of less than 60 nm. A method includes forming at least one grate array above a substrate, illuminating the grate array, measuring light reflected off of the grate array to generate an optical characteristic trace for the grate array, and comparing the generated optical characteristic trace to a target optical characteristic trace that corresponds to a grate array having a desired profile. The generated trace can further be used to calibrate the ring oscillator

Claims

1. A ring oscillator comprising:

a number of serially connected inverter stages, each stage including a p-channel transistor serially connected with an n-channel transistor; and

wherein at least one of the transistors comprises a scatterometry grate array.

2. The ring oscillator according to claim 1, wherein the scatterometry grate array comprises a plurality of parallel polysilicon lines.

3. The ring oscillator according to claim 2, wherein one of the plurality of parallel polysilicon lines is comprised of an active dopant.

4. The ring oscillator according to claim 1, wherein the p-channel transistor is serially connected with the n-channel transistor between a first voltage potential and a second voltage potential, and with a common terminal of a serially connected transistor being an output.

5. The ring oscillator according to claim 4, wherein the output of one stage is connected to a gate terminal of the p-channel transistor in a succeeding stage.

6. The ring oscillator according to claim 5, further comprising a capacitor connected to each output.

7. The ring oscillator according to claim 6, further comprising a reference voltage connected to a gate of each n-channel transistor whereby the discharge of the capacitor of a preceding stage is relatively independent of the first voltage potential.

8. The ring oscillator according to claim 1, wherein the scatterometry grate array comprises a plurality of parallel polysilicon lines each having a thickness of less than 60 nm.

9. The ring oscillator according to claim 1, wherein the scatterometry grate array comprises a plurality of parallel polysilicon lines and at least one of the polysilicon lines is conductive.

10. A method, comprising:

forming at least one grate array above a substrate, wherein the grate array forms part of a transistor of a ring oscillator;

illuminating the grate array;

measuring light reflected off of the grate array to generate an optical characteristic trace for the grate array;

comparing the generated optical characteristic trace to a target optical characteristic trace that corresponds to a grate array having a desired surface profile; and

controlling a process for forming the grate array based upon the comparison of the generated trace and the target trace.

11. The method of claim 10, wherein the process for forming the grate array comprises a line forming process.

12. The method of claim 10, wherein the generated trace is used to calibrate the ring oscillator.

13. The method of claim 10, wherein the grate array is formed of parallel polysilicon lines.

14. The method of claim 13, wherein one of the parallel polysilicon lines is doped.

15. The method of claim 10, wherein the ring oscillator includes a number of serially connected inverter stages having a p-channel transistor serially connected with an n-channel transistor, and wherein at least one of the transistors comprises the scatterometry grate array.

16. The method of claim 15, wherein the p-channel transistor is serially connected with the n-channel transistor between a first voltage potential and a second voltage potential, and with a common terminal of a serially connected transistor being an output.

17. The method of claim 16, wherein an output of one stage is connected to the gate terminal of the p-channel transistor in a succeeding stage.

18. The method of claim 17, further comprising a capacitor connected to each output.

19. The method of claim 18, further comprising a reference voltage connected to a gate of each n-channel transistor whereby the discharge of a capacitor of a preceding stage is relatively independent of the first voltage potential.

20. The method of claim 10, wherein the grate array comprises a plurality of parallel lines each having a thickness of less than 60 nm.