Implantation method
First Claim
1. A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, wherein a beam of ions is directed at the layer of insulating material such that a substantial proportion of ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of insulating material, wherein the surface is defined by a wall of trench formed in the semicoductor structure,wherein, before ion implantation, the trench is partially filled with conductive material electrically insulated from the semiconductor structure, wherein the trench is formed in the semiconductor structure, the trench walls are oxidized, and the trench is partially filled with a conductive material, the beam of ions being directed at a glancing angle to the oxide covering the trench walls above the conductive material, and wherein the glancing angle is between approximately 0 and 10 degrees from the perpendicular to the surface of the semiconductor device.
2 Assignments
0 Petitions
Accused Products
Abstract
A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, for example into a trench wall covered by a layer of oxide. A beam of ions is directed at a glancing angle to the layer of insulating material such that a substantial proportion of ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of insulating material. It is possible therefore to implant ions into a trench wall without requiring a beam source arranged to deliver a beam at a large angle to the trench wall surface.
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Citations
16 Claims
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1. A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, wherein a beam of ions is directed at the layer of insulating material such that a substantial proportion of ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of insulating material, wherein the surface is defined by a wall of trench formed in the semicoductor structure,
wherein, before ion implantation, the trench is partially filled with conductive material electrically insulated from the semiconductor structure, wherein the trench is formed in the semiconductor structure, the trench walls are oxidized, and the trench is partially filled with a conductive material, the beam of ions being directed at a glancing angle to the oxide covering the trench walls above the conductive material, and wherein the glancing angle is between approximately 0 and 10 degrees from the perpendicular to the surface of the semiconductor device.
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9. A method of implanting ions into a surface of a semiconductor device wherein the semiconductor device has a surface with at least one trench gate semiconductor structure formed therein, the trench gate semiconductor structure having trench wall covered by a layer of insulating material, the method comprising directing a beam of ions at the layer of insulating material at an angle substantially perpendicular to the surface of the semiconductor device such that a substantial proportion of ions are scattered from the beam by the layer of insulating material and implanted into the trench wall,
wherein then angle is between approximately 0 and 10 degrees from the perpendicular to the surface of the semiconductor device.
Specification